3PMT6.0CAE3 datasheet, PDF - EEWORLD Datasheet

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3PMT6.0CAE3: DescriptionTrans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-201, PLASTIC, POWERMITE-2; CategoryDiscrete semiconductor diode; File Size218KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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3PMT6.0CAE3 Overview

Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-201, PLASTIC, POWERMITE-2

3PMT6.0CAE3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	DO-201
package instruction	R-PSSO-G2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	6.67 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-201
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	6 V
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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3PMT5.0A thru 3PMT170A

POWERMITE

Low Profile 1500 Watt

Transient Voltage Suppressor

SCOTTSDALE DIVISION

DESCRIPTION

These 1500 watt transient voltage suppressors offer power-handling capabilities

only found in larger packages. They are most often used for protecting against

transients from inductive switching environments or induced secondary lightning

effects as found in lower surge levels of IEC61000-4-5. With very fast response

times, they are also effective in protection from ESD or EFT. Powermite package

features include a full-metallic bottom that eliminates the possibility of solder-flux

entrapment during assembly. They also provide unique locking tabs acting as an

integral heat sink. With its very short terminations, parasitic inductance is minimized

to reduce voltage overshoots during fast-rise-time transients

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

APPEARANCE

WWW .

Microsemi

FEATURES

•

Very low profile surface mount package (1.1mm)

Integral heat-sink-locking tabs

Compatible with automatic insertion equipment

Full-metallic bottom eliminates flux entrapment

Voltage range 5 volts to 170 volts

Available in both unidirectional or bidirectional

(CA suffix for bidirectional)

•

APPLICATIONS / BENEFITS

Secondary lightning transient protection

Inductive switching transient protection

Small footprint

Very low parasitic inductance for minimal

voltage overshoot

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively and

IEC61000-4-5 for surge levels defined herein

MAXIMUM RATINGS

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

1500 Watt peak pulse power (10 / 1000 µs)

Forward Surge Current: 200 Amps at 8.3 ms

(excluding bidirectional)

•

Repetition surge rate (duty factor): 0.01%

•

Thermal resistance: 2.5°C / watt junction to tab

130°C / watt junction to ambient with

recommended footprint

•

Lead and mounting temperature: 260°C for 10 s

•

MECHANICAL AND PACKAGING

Terminals: All terminals are tin-lead plated

Polarity: Two-leads on side are internally connected

together for anode and backside is cathode

(unidirectional devices only)

Marking: Body marked with P/N without 3PMT

prefix

(ie. 5.0A, 5.0CA, 12A, 12CA, 170A, 170CA, etc.)

Molded epoxy package meets UL94V-0

Weight: 0.072 grams (approximate)

Tape & Reel packaging per EIA-481-2

(16 mm - 6000 units/reel)

ELECTRICAL CHARACTERISTICS

MICROSEMI

PART NUMBER

STANDOFF

VOLTAGE

VOLTS

3PMT5.0A

3PMT6.0A

3PMT6.5A

3PMT7.0A

3PMT7.5A

3PMT8.0A

3PMT8.5A

3PMT9.0A

3PMT10A

3PMT11A

3PMT12A

6.5

7.5

8.5

9.0

BREAKDOWN

VOLTAGE

@1 mA

VOLTS

MIN

6.40

6.67

7.22

7.78

8.33

8.89

9.94

10.0

11.1

12.2

13.3

CLAMPING

VOLTAGE

@ I

(FIGURE 4)

VOLTS

MAX

9.2

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

PEAK PULSE

CURRENT

(FIGURE 4)

AMPS

163.0

145.6

133.9

125.0

116.3

110.3

104.2

97.4

88.2

82.4

75.3

STANDBY

CURRENT

@ V

µA

MAX

1000

500

200

100

TEMPERATURE

COEFFICIENT

OF V

V(BR)

%/°C

MAX

.057

.059

.061

.065

.067

.070

.073

.076

.078

.081

.082

3PMT



2003

10-6-2003 REV B

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

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