E2G0017-17-42
¡ Semiconductor
MSM512200/L
¡ Semiconductor
This version: Jan. 1998
MSM512200/L
Previous version: May 1997
1,048,576-Word
¥
2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM512200/L is a 1,048,576-word
¥
2-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM512200/L achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM512200/L is available in a 26/20-pin plastic SOJ or 26/20-pin plastic
TSOP. The MSM512200L (the low-power version) is specially designed for lower-power applications.
FEATURES
• 1,048,576-word
¥
2-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM512200/L-xxSJ)
26/20-pin 300 mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM512200/L-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM512200/L-60
MSM512200/L-70
MSM512200/L-80
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
80 ns 40 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
110 ns
130 ns
150 ns
440 mW
385 mW
330 mW
5.5 mW/
0.55 mW (L-version)
1/17
¡ Semiconductor
MSM512200/L
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A9)
Input Capacitance
(RAS,
CAS1, CAS2, WE, OE)
Output Capacitance (DQ1, DQ2)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
6
7
7
Unit
pF
pF
pF
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¡ Semiconductor
DC Characteristics
MSM512200/L
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Condition
MSM512200 MSM512200 MSM512200
/L-60
/L-70
/L-80
Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS1, CAS2
I
CC1
cycling,
t
RC
= Min.
RAS, CAS1, CAS2
= V
IH
I
CC2
RAS, CAS1, CAS2
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS1, CAS2
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS1, CAS2
= V
IL
,
DQ = enable
RAS
cycling,
I
CC6
CAS1, CAS2
before
RAS
RAS
= V
IL
,
I
CC7
CAS1, CAS2
cycling,
t
PC
= Min.
t
RC
= 125
ms,
I
CC10
CAS1, CAS2
before
RAS,
t
RAS
£
1
ms
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
I
LO
–10
10
–10
10
–10
10
mA
—
—
—
—
—
80
2
1
100
80
—
—
—
—
—
70
2
1
100
70
—
—
—
—
—
60
2
1
100
60
mA 1, 2
mA
mA
1
1, 5
mA 1, 2
—
5
—
5
—
5
mA
1
—
80
—
70
—
60
mA 1, 2
—
60
—
55
—
50
mA 1, 3
—
200
—
200
—
200
mA
1, 4,
5
Notes : 1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS1, CAS2
= V
IH
.
V
CC
– 0.2 V
£
V
IH
£
6.5 V, –1.0 V
£
V
IL
£
0.2 V.
L-version.
5/17
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