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MSC82306

Description
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
CategoryDiscrete semiconductor    The transistor   
File Size49KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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MSC82306 Overview

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82306 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
package instructionFLANGE MOUNT, O-CRFM-F2
Contacts2
Reach Compliance Codeunknow
Shell connectionBASE
Maximum collector current (IC)0.9 A
Collector-based maximum capacity7 pF
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandS BAND
JESD-30 codeO-CRFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)16.7 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MSC82306
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
.
.
.
PRELIMINARY DATA
REFRACTORY\GOLD METALLIZATION
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
HERMETIC STRIPAC
®
PACKAGE
P
OUT
=
5.5 W MIN. WITH 9.6 dB GAIN
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82306
BRANDING
82306
PIN CONNECTION
DESCRIPTION
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
50°C)
16.7
900
26
200
65 to +200
W
mA
V
°
C
°
C
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
9.0
°
C/W
*Applies only to rated RF amplifier operation
October 1992
1/4

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