MSC81005
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
.
.
.
.
EMITTER BALLASTED
REFRACTORY/GOLD METALLIZATION
VSWR CAPABILITY
∞
:1 @ RATED
CONDITIONS
HERMETIC STRIPAC
®
PACKAGE
P
OUT
=
5.0 W MIN. WITH 10 dB GAIN
@ 1 GHz
.230 2L STUD (S016)
hermetically sealed
ORDER CODE
MSC81005
BRANDING
81005
PIN CONNECTION
DESCRIPTION
The MSC81005 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC81005 is designed for Class C amplifier ap-
plications in the 0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
1. Collector
2. Base
3. Emitter
Value
Unit
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
≤
50°C)
18.75
600
35
200
−
65 to +200
W
mA
V
°
C
°
C
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
8.0
°
C/W
*Applies only to rated RF amplifier operation
October 1992
1/5
MSC81005
ELECTRICAL SPECIFICATIONS
(T
case
=
25
°
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CBO
BV
EBO
BV
CER
I
CBO
h
FE
DYNAMIC
Symbol
I
C
=
1mA
I
E
=
1mA
IC
=
5mA
V
CB
=
28V
V
CE
=
5V
I
E
=
0mA
I
C
=
0mA
R
BE
=
10Ω
I
C
=
200mA
45
3.5
45
—
15
—
—
—
—
—
—
—
—
1.0
120
V
V
V
mA
—
Test Conditions
Value
Min.
Typ.
Max.
Unit
P
OUT
η
c
G
P
C
OB
f
=
1.0 GHz
f
=
1.0 GHz
f
=
1.0 GHz
f
=
1 MHz
P
IN
=
0.5 W
P
IN
=
0.5 W
P
IN
=
0.5 W
V
CB
=
28 V
V
CC
=
28 V
V
CC
=
28 V
V
CC
=
28 V
5.0
50
10
—
6.6
52
11.2
—
—
—
—
6.5
W
%
dB
pF
TYPICAL PERFORMANCE
POWER OUTPUT vs FREQUENCY
COLLECTOR EFFICIENCY
vs FREQUENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
2/5
MSC81005
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
P
IN
=
0.5 W
V
CC
=
35 V
Normalized to 50 ohms
FREQ.
0.4 GHz
0.6 GHz
0.8 GHz
1.0 GHz
1.2 GHz
Z
IN
(Ω)
4.0 + j 0.8
4.1 + j 2.0
4.2 + j 3.2
4.3 + j 4.5
4.4 + j 7.1
Z
CL
(Ω)
40.0 + j 38.0
24.0 + j 29.5
15.0 + j 22.0
9.4 + j 16.0
6.0 + j 11.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
P
OUT
=
Saturated
V
CC
=
35 V
Normalized to 50 ohms
3/5
MSC81005
TEST CIRCUIT
Ref.: Dwg. No. C127318A
Frequency 1.0 GHz
All dimensions are in inches.
PACKAGE MECHANICAL DATA
4/5
MSC81005
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
京公网安备 11010802033920号
EEWORLD
