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MSB709-RT1

Description
PNP General Purpose Amplifier Transistor Surface Mount
CategoryDiscrete semiconductor    The transistor   
File Size40KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MSB709-RT1 Overview

PNP General Purpose Amplifier Transistor Surface Mount

MSB709-RT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)210
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.5 V
MSB709−RT1
Preferred Device
PNP General Purpose
Amplifier Transistor
Surface Mount
Features
Pb−Free Package is Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector − Base Voltage
Collector − Emitter Voltage
Emitter − Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Value
−60
−45
−7.0
−100
−200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
2
BASE
1
EMITTER
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
200
150
−55 ~ +150
Unit
mW
°C
°C
AR
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
2
1
3
SC−59
CASE 318D
AR M
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 6
Publication Order Number:
MSB709−RT1/D

MSB709-RT1 Related Products

MSB709-RT1 MSB709RT1
Description PNP General Purpose Amplifier Transistor Surface Mount PNP General Purpose Amplifier Transistor Surface Mount
Is it Rohs certified? incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.1 A 0.1 A
Configuration SINGLE Single
Minimum DC current gain (hFE) 210 210
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
surface mount YES YES
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