MSAFA75N10C
SANTA ANA DIVISION
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
DESCRIPTION
New generation N-channel enhancement mode power MOSFET with
rugged polysilicon gate structure and fast switching intrinsic rectifier. The
TM
very rugged Coolpack2
surface-mount package is lightweight, space
saving and hermetically sealed for high reliability and/or military/space
application.
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•
•
•
•
•
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
KEY FEATURES
Ultrafast body diode
Increased Unclamped
Inductive Switching (UIS)
capability
Hermetically sealed, surface
mount power package
Very low package inductance
Very low thermal resistance
Reverse polarity available
upon request
W W W .
Microsemi
.COM
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFIT S
•
DC-DC converters
•
Motor controls
•
Uninterruptible Power
Supply(UPS)
•
DC choppers
•
Synchronous rectification
•
Inverters
MAXIMUM RATINGS @ 25°C (unless otherwise specified)
Description
Drain-to-Source Voltage (Gate Shorted to Source)
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Peak Drain Current, pulse width limited by
T
Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy (3)
Total Power Dissipation @T
c
=25°C
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Symbol
V
DSS
V
GS
V
GSM
I
D25
I
D10
0
I
DM
I
AR
E
AR
E
AS
P
D
Tj
Max.
100
+/-30
+/-40
75
60
300
75
30
1500
540
-55 to
+150
-55 to
+150
75
300
0.23
Unit
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
Watts
°C
°C
Amps
Amps
°C/W
T
j
= 25°C
T
j
= 100°C
T
stg
I
S
I
SM
θ
JC
MSAFA75N10C
MSAFA75N10C
Copyright
2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
MSAFA75N10C
SANTA ANA DIVISION
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
W W W .
Microsemi
.COM
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Description
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Gate Threshold Voltage
Static Drain-to-Source On-State Resistance (1)
Symbol
BV
DSS
I
GSS
I
DSS
V
GS(th)
R
DS(on)
Conditions
V
GS
= 0 V,
I
D
= 250
µA
V
GS
=
±
30
V
DC
,
V
DS
= 0
V
DS
=0.8•BV
DSS
V
GS
= 0 V
V
DS
=
V
GS
,
I
D
= 1 mA
V
GS
= 10V,
I
D
= 37.5A
I
D
= 75A
I
D
= 37.5A
T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
Min
100
Typ.
Max
±100
250
1000
Unit
V
nA
µA
V
Ω
2.0
0.02
0.035
5100
1900
800
16
40
50
20
200
40
92
4.0
0.019
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
V
SD
t
rr
Q
rr
V
GS
= 0 V,
V
DS
= 25 V, f = 1 MHz
6120
2660
1200
32
40
75
40
300
60
180
1.3
pF
V
GS
= 15 V,
V
DS
= 50 V,
I
D
= 37.5 A,
R
G
= 1.6
Ω
ns
V
GS
= 10 V,
V
DS
= 50V,
I
D
= 37.5A
nC
I
s
= 75A,
V
GS
= 0 V
I
F
= 10 A, di/dt = 100 A/µs
I
F
= 10 A, di/dt = 100 A/µs
200
1.4
V
ns
µC
ELECTRICALS
ELECTRICALS
Copyright
2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
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