Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
MSA-0735, -0736
Features
• Cascadable 50
Ω
Gain Block
• Low Operating Voltage:
4.0 V Typical V
d
• 3 dB Bandwidth:
DC to 2.4 GHz
• 13.0 dB Typical Gain at
1.0 GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
microstrip package. This MMIC is
designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
35 micro-X Package
[1]
Note:
1. Short leaded 36 package available upon
request.
Description
The MSA-0735 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
Typical Biasing Configuration
R
bias
V
CC
> 5 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 4.0 V
2
5965-9591E
6-394
MSA-0735, -0736 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
60 mA
275 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,5]
:
θ
jc
= 155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.5 mW/°C for T
C
> 157°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. Ths small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 22 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 1.3 GHz
Units
dB
dB
GHz
Min.
12.5
Typ.
13.5
±
0.6
2.4
2.0:1
1.8:1
Max.
14.5
±
1.0
dB
dBm
dBm
psec
V
mV/°C
3.6
4.5
5.5
19.0
140
4.0
–7.0
4.4
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0735
MSA-0736-BLK
MSA-0736-TR1
No. of Devices
10
100
1000
Container
Strip
Antistatic Bag
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-395
MSA-0735, -0736 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 22 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.13
.13
.14
.16
.19
.21
.27
.32
.37
.43
.47
.49
.51
.60
–3
–6
–13
–20
–29
–40
–71
–107
–134
–160
–179
167
134
96
13.5
13.4
13.4
13.3
13.2
12.9
12.2
11.5
10.3
8.8
7.5
6.2
4.0
2.1
4.71
4.69
4.68
4.64
4.60
4.42
4.07
3.74
3.26
2.76
2.37
2.05
1.59
1.27
175
170
160
150
140
129
104
79
62
44
27
12
–15
–42
–19.0
–18.5
–18.6
–18.4
–18.1
–17.6
–16.5
–15.6
–15.3
–15.4
–15.3
–15.2
–15.2
–14.6
.112
.119
.118
.120
.125
.131
.149
.165
.173
.171
.173
.168
.173
.185
2
3
6
7
8
10
10
7
5
0
–4
–6
–11
–16
.29
.29
.29
.28
.28
.27
.24
.19
.15
.14
.16
.21
.28
.29
–7
–12
–24
–35
–47
–58
–83
–103
–113
–120
–120
–121
–135
–167
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
14
Gain Flat to DC
12
10
30
40
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
16
14
12
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
G
p
(dB)
I
d
(mA)
G
p
(dB)
8
6
4
2
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
20
10
8
10
6
0
0
1
2
3
V
d
(V)
4
5
4
10
20
30
I
d
(mA)
40
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 22 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
G
p
(dB)
14
13
12
15
I
d
= 40 mA
12
G
P
6.0
5.5
I
d
= 15 mA
I
d
= 22 mA
I
d
= 40 mA
NF (dB)
P
1 dB
(dBm)
NF
6
5
4
9
6
3
4.5
0
I
d
= 15 mA
I
d
= 22 mA
NF (dB)
0.5
1.0
2.0
4.0
5.0
P
1 dB
(dBm)
6
5
4
3
–55 –25
+25
+85
P
1 dB
+125
–3
0.1
4.0
0.2 0.3
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=22mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-396
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
3
.020
.508
2
GROUND
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
1
.057
±
.010
1.45
±
.25
.100
2.54
.022
.56
.455
±
.030
11.54
±
.75
.006
±
.002
.15
±
.05
A07
RF INPUT
6-397
ARM Technology
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