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UFB200FA40

Description
202 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size104KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

UFB200FA40 Overview

202 A, 400 V, SILICON, RECTIFIER DIODE

UFB200FA40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-CUFM-X4
Contacts4
Reach Compliance Codecompli
Other featuresSNUBBER DIODE
applicationULTRA FAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-CUFM-X4
JESD-609 codee0
Maximum non-repetitive peak forward current1300 A
Number of components2
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current115 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse current50 µA
Maximum reverse recovery time0.06 µs
Reverse test voltage400 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Bulletin PD-20486 rev. C 10/02
UFB200FA40
Insulated Ultrafast Rectifier Module
Features
Two Fully Independent Diodes
Ceramic Fully Insulated Package (V
ISOL
= 2500V AC)
Ultrafast Reverse Recovery
Ultrasoft Reverse Recovery Current Shape
Low Forward Voltage
Optimized for Power Conversion: Welding and Industrial SMPS Applications
Industry Standard Outline
Plug-in Compatible with other SOT-227 Packages
Easy to Assemble
Direct Mounting to Heatsink
t
rr
= 60ns
I
F(AV)
= 230A
@ T
C
= 90°C
V
R
= 400V
Description
The UFB200FA40 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life-
time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC-
DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
Absolute Maximum Ratings
Parameters
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
STG
Cathode-to-Anode Voltage
Continuous Forward Current, T
C
= 90°C
Single Pulse Forward Current, T
C
= 25°C
Max. Power Dissipation, T
C
@ 90°C
Operating Junction and Storage Temperatures
Per Diode
Per Diode
Per Module
Max
400
115
1300
240
2500
- 55 to 150
Units
V
A
W
V
°C
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Case Styles
UFB200FA40
1
4
SOT-227
www.irf.com
2
3
1
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