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UMB6N

Description
General purpose (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size48KB,1 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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UMB6N Overview

General purpose (dual digital transistors)

UMB6N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)0.03 A
Minimum DC current gain (hFE)68
JESD-609 codee2
Number of components2
Polarity/channel typePNP
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Transistor component materialsSILICON
Base Number Matches1
EMB6 / UMB6N
Transistors
General purpose (dual digital transistors)
EMB6 / UMB6N
!
Feature
1) Two DTA144E chips in a EMT or UMT package.
!
External dimensions
(Units : mm)
EMB6
0.22
(4)
(5)
(6)
(3)
(2)
!
Equivalent circuit
0.13
1.2
1.6
(1)
EMB6 / UMB6N
(3)
(2)
(1)
Each lead has same dimensions
R
1
R
2
R
2
R
1
(4) (5)
(6)
ROHM : EMT6
UMB6N
(4)
0.65
1.3
0.65
0.7
0.9
(3)
0.5
0.5 0.5
1.0
1.6
0.2
(6)
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMB6
EMT6
B6
T2R
8000
UMB6N
B6
TR
3000
ROHM : UMT6
EIAJ : SC-88
0.15
1.25
2.1
UMT6
0.1Min.
0to0.1
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
Symbol
V
CC
V
IN
I
O
Pd
Tj
Tstg
Limits
−50
−40
10
50
150(TOTAL)
150
−55
~
+150
Unit
V
V
mA
mW
∗1
°C
°C
!
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗Transition
frequency of the device.
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
R
1
R
2
/ R
1
f
T
Min.
−3.0
68
32.9
0.8
Typ.
−0.1
47
1.0
250
Max.
−0.5
−0.3
−0.18
−0.5
61.1
1.2
(1)
Each lead has same dimensions
Unit
V
V
mA
µA
kΩ
MHz
Conditions
V
CC
=−5V,
I
O
=−100µA
V
O
=−0.3V,
I
O
=−2mA
I
O
=−10mA,
I
I
=−0.5mA
V
I
=−5V
V
CC
=−50V,
V
I
=0V
I
O
=−5mA,
V
O
=−5V
V
CE
=−10V,
I
E
=5mA,
f=100MHz
2.0
(5)
(2)

UMB6N Related Products

UMB6N EMB6
Description General purpose (dual digital transistors) General purpose (dual digital transistors)

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