FZT690B
FZT690B
C
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
TYPICAL CHARACTERISTICS
I
C
/I
B
=100
I
C
/I
B
=200
T
amb
=25°C
0.8
I
C
/I
B
=10
I
C
/I
B
=100
0.8
-55°C
+25°C
+100°C
+175°C
E
C
B
- (Volts)
- (Volts)
0.6
0.6
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance;
R
CE(sat)
125mΩ at 2A
* Gain of 400 at I
C
=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL
FZT690B
0.4
0.4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
0.01
0.1
1
10
V
0.2
V
0.2
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
45
45
5
6
3
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
0
0
0.01
0.1
1
10
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
I
C
/I
B
=100
V
CE
=2V
1.4
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+175°C
1.5K
1.6
1.2
1.4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
1.0
1.2
1K
0.8
- (Volts)
1.0
SYMBOL MIN. TYP. MAX UNIT CONDITIONS.
.
V
(BR)CBO
45
V
(BR)CEO
45
V
(BR)EBO
5
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
0.1
0.1
0.1
0.5
V
V
V
µ
A
µ
A
0.6
0.8
- Normalised Gain
V
0.4
- Typical Gain
500
0.6
Collector-Base Breakdown
Voltage
Collector-EmitterBreakdown
0.01
0.1
1
10
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=35V
V
EB
=4V
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
0.2
h
h
0.4
0.2
0
0
0.01
0.1
1
10
0
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
V
CE
=2V
10
0.9
V
BE(on)
h
FE
0.9
V
V
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
1.6
-55°C
+25°C
+100°C
+175°C
1.4
1.2
1
- (Volts)
1.0
0.8
V
0.6
0.1
DC
1s
100ms
10ms
1ms
100
µ
s
500
400
150
50
f
T
100
I
C
=100mA,V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
150
Input Capacitance
C
ibo
200
Output Capacitance
Switching Times
C
obo
t
on
t
off
16
33
1300
MHz I
C
=50mA,V
CE
=5V,f=50MHz
pF
V
EB
=0.5V, f=1MHz
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 221
V
CB
=10V, f=1MHz
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
0.4
0.2
0
0
0.01
0.1
1
10
0.01
0.1
1
10
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
3 - 222
FZT690B
FZT690B
C
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
TYPICAL CHARACTERISTICS
I
C
/I
B
=100
I
C
/I
B
=200
T
amb
=25°C
0.8
I
C
/I
B
=10
I
C
/I
B
=100
0.8
-55°C
+25°C
+100°C
+175°C
E
C
B
- (Volts)
- (Volts)
0.6
0.6
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance;
R
CE(sat)
125mΩ at 2A
* Gain of 400 at I
C
=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL
FZT690B
0.4
0.4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
0.01
0.1
1
10
V
0.2
V
0.2
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
45
45
5
6
3
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
0
0
0.01
0.1
1
10
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
I
C
/I
B
=100
V
CE
=2V
1.4
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+175°C
1.5K
1.6
1.2
1.4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
1.0
1.2
1K
0.8
- (Volts)
1.0
SYMBOL MIN. TYP. MAX UNIT CONDITIONS.
.
V
(BR)CBO
45
V
(BR)CEO
45
V
(BR)EBO
5
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
0.1
0.1
0.1
0.5
V
V
V
µ
A
µ
A
0.6
0.8
- Normalised Gain
V
0.4
- Typical Gain
500
0.6
Collector-Base Breakdown
Voltage
Collector-EmitterBreakdown
0.01
0.1
1
10
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=35V
V
EB
=4V
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
0.2
h
h
0.4
0.2
0
0
0.01
0.1
1
10
0
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
V
CE
=2V
10
0.9
V
BE(on)
h
FE
0.9
V
V
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
1.6
-55°C
+25°C
+100°C
+175°C
1.4
1.2
1
- (Volts)
1.0
0.8
V
0.6
0.1
DC
1s
100ms
10ms
1ms
100
µ
s
500
400
150
50
f
T
100
I
C
=100mA,V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
150
Input Capacitance
C
ibo
200
Output Capacitance
Switching Times
C
obo
t
on
t
off
16
33
1300
MHz I
C
=50mA,V
CE
=5V,f=50MHz
pF
V
EB
=0.5V, f=1MHz
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 221
V
CB
=10V, f=1MHz
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
0.4
0.2
0
0
0.01
0.1
1
10
0.01
0.1
1
10
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
3 - 222
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