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MRF959T1

Description
LOW NOISE TRANSISTORS
File Size110KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet View All

MRF959T1 Overview

LOW NOISE TRANSISTORS

MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF959T1/D
NPN Silicon
Low Noise Transistors
Motorola’s MRF959 is a high performance silicon NPN transistor designed for
use in high gain, low noise small–signal amplifiers. The MRF959 is well suited
for low voltage applications. This device features a 9 GHz DC current
gain–bandwidth product with excellent linearity.
Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA
High Current Gain–Bandwidth Product, ft = 9 GHz @ 30 mA
Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA
Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per Reel
MRF959T1
ICmax = 100 mA
LOW NOISE
TRANSISTORS
CASE 463–01, STYLE 1
(SC–90)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above TC = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
PDmax
IC
TJmax
Tstg
R
θJC
Value
10
20
1.5
0.150
2
100
150
– 55 to +150
500
Unit
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
DEVICE MARKINGS
MRF959T1 = V1
(1) To calculate the junction temperature use TJ = (PD x R
θJC
) + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC — Continuous (MTBF > 10 years).
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF959T1
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