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MRF898

Description
RF POWER TRANSISTOR NPN SILICON
CategoryDiscrete semiconductor    The transistor   
File Size67KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MRF898 Overview

RF POWER TRANSISTOR NPN SILICON

MRF898 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Objectid1465044033
package instructionFLANGE MOUNT, R-CDFM-F6
Contacts6
Manufacturer packaging codeCASE 333A-02
Reach Compliance Codeunknow
ECCN codeEAR99
compound_id10894163
Other featuresWITH EMITTER BALLASTING RESISTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F6
Number of components1
Number of terminals6
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment175 W
Minimum power gain (Gp)7 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF898/D
NPN Silicon
RF Power Transistor
. . . designed for 24 Volt UHF large–signal, common base amplifier applications
in industrial and commercial FM equipment operating in the range of
850 – 960 MHz.
Motorola Advanced Amplifier Concept Package
Specified 24 Volt, 900 MHz Characteristics
Output Power = 60 Watts
Power Gain = 7.0 dB Min
Efficiency = 60% Min
Double Input/Output Matched for Wideband Performance and Simplified
External Matching
Series Equivalent Large–Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF898
60 W, 850 – 960 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 333A–02, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
30
55
4.0
10
175
1.0
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Max
1.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
30
55
4.0
10
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF898
39
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