MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF650/D
NPN Silicon
RF Power Transistor
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 520 MHz.
•
Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
Output Power = 50 Watts
Minimum Gain = 5.2 dB @ 440, 470 MHz
Efficiency = 55% @ 440, 470 MHz
IRL = 10 dB
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
•
Built–In Matching Network for Broadband Operation
•
Triple Ion Implanted for More Consistent Characteristics
•
Implanted Emitter Ballast Resistors
•
Silicon Nitride Passivated
•
100% Tested for Load Mismatch Stress at all Phase Angles with 20:1
VSWR @ 15.5 Vdc, 2.0 dB Overdrive
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF650
50 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Value
16.5
38
4.0
12
135
0.77
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Cob
16.5
38
4.0
—
—
—
—
—
—
—
—
5.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
20
70
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
—
135
170
pF
(continued)
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF650
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture. See Figure 1.)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz)
Input Return Loss
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470, 512 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz)
Output Mismatch Stress
(VCC = 15.5 V, 2.0 dB Overdrive, f = 470 MHz,
VSWR = 20:1, All Phase Angles) (1)
Gpe
Gpe
IRL
η
—
ψ
(2)
No Degradation in Output Power
5.2
5.0
10
55
50
6.1
5.9
15
65
60
—
—
—
—
—
dB
dB
dB
%
%
NOTES:
1. Pin = 2.0 dB above drive requirement for 50 W output at 12.5 Vdc.
2.
ψ
= Mismatch stress factor — the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress
test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.
R1
∆
VRE
PORT
B1
B2
B3
SOCKET
+
C1
C2
C3
B4
B5
+
C8
B6
B7
R2
B8
+12.5 Vdc
C6
C7
C4
L1
RF INPUT
50
Ω
N1
C12
TL2
C10
C11
D.U.T.
TL1
C9
TL3
TL4
TL5 TL6
C5
L2
TL7
TL8
TL9
TL10
C16
TL12
RF
OUTPUT
50
Ω
N2
C13
C14
C15
TL11
B1, B8 — Ferrite Bead Ferroxcube VK200 20–4B
B2, B3, B4, B5, B6, B7 — Ferrite Bead Ferroxcube #56–590–3B
C1, C8 — 10
µF,
25 V, 25%, Electrolytic, ECS TE–1204
C2, C7 — 1000 pF, Chip Cap, 5%, ATC 100B102JC50
C3, C6 — 91 pF, 5%, Mica, SAHA 3HS0006–91
C4, C5, C12, C13 — 36 pF, 5%, SAHA 3HS0006–36
C9, C16 — 220 pF, Chip Cap, 5%, ATC 100B221JC200
C10, C11, C15 — 0.8 – 10 pF, Variable, Johanson JMC501 PG26J200
C14 — 1.0 – 20 pF, Variable, Johanson JMC5501 PG26J200
L1, L2 — 3 Turns, 18 AWG, 0.19″ ID — Total Length 3.5″
N1, N2 — N Coaxial Conn., Omni–Spectra 3052–1648–10
R1, R2 — 10 Ohm, 10%, 1.0 W, Carbon, RCA 831010
TL1, TL12 — Zo = 50 Ohm
TL2 — See Photomaster
TL3 — See Photomaster
TL4 — See Photomaster
TL5 — See Photomaster
TL6 — See Photomaster
TL7 — See Photomaster
TL8 — See Photomaster
TL9 — See Photomaster
TL10 — See Photomaster
TL11 — See Photomaster
Transmission Line Boards: 1/16″ Glass–Teflon
Transmission Line Boards:
Keene GX–0600–55–22
Transmission Line Boards:
2 oz. Cu Clad Both Sides
Transmission Line Boards:
ε
r = 2.55
Bias Boards: 1/16″ G10 or Equivalent
Bias Boards:
2 oz. Cu Clad Double Sided
Figure 1. 440 to 512 MHz Broadband Test Circuit Schematic
MRF650
2
MOTOROLA RF DEVICE DATA
90
80
Po, OUTPUT POWER (WATTS)
70
60
50
40
30
20
10
0
0
4
8
12
16
20
VCC = 12.5 Vdc
Po, OUTPUT POWER (WATTS)
f = 400
MHzMHz
470
512 MHz
520 MHz
80
70
60
50
40
30
20
10
32
0
400
420
440
460
480
VCC = 12.5 Vdc
Pin = 17 W
15 W
13 W
11 W
24
28
500
520
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
80
Po, OUTPUT POWER (WATTS)
70
60
50
40
30
Pin = 17 W
Pin, INPUT POWER (WATTS)
15 W
13 W
11 W
14
12
10
8
6
4
2
VSWR
440
460
480
f, FREQUENCY (MHz)
500
η
c
Pin
Po = 50 W
VCC = 12.5 Vdc
90
80
70
60
2.0:1
1.5:1
520
1.0:1
f = 512 MHz
20
10
7
8
9
10
11
12
13
14
15
16
17
0
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Broadband Performance for Po = 50 W
Pout = 50 W, VCC = 12.5 Vdc
TUNED FOR MAXIMUM
GAIN AT Po = 50 W
Zin
470
440
f = 400 MHz
512
520
f
(MHz)
400
440
470
512
520
Zin
Ω
0.7 + j2.8
0.7 + j3.2
0.8 + j3.3
0.8 + j3.2
0.7 + j3.0
ZOL*
Ω
1.4 + j2.3
1.1 + j2.6
0.8 + j2.7
0.7 + j2.9
0.6 + j3.0
ZOL*
520
470
512
440
f = 400 MHz
NOTE: Zin & ZOL* are given from base–to–base
and collector–to–collector respectively.
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device operates at a given
ZOL* =
output power, voltage and frequency.
Figure 6. Input and Output Impedance Normalized to 10 Ohms
Circuit Tuned for Maximum Gain @ Po = 50 W
MOTOROLA RF DEVICE DATA
MRF650
3
VSWR
η
c , COLLECTOR EFFICIENCY (%)
90
16
R1, R2, R3, R4
B1
L1
C2
C3
TL4
C5
(440 – 512 MHz)
L2
C10
C7
TL11
TL9 TL10
TL12
TL13 C12
B2
B3
+12.5 Vdc
C11
C13
D.U.T.
TL1
N1
C1
TL2
TL3
TL5
TL6
TL7
TL8
TL14
N2
C4
C6
C8
C9
B1, B2 — Ferrite Bead Fair Rite Products Corp.
B3 — Ferrite Bead Fair Rite Products Corp.
C2, C11 — 820 pF, 5%
C3, C10 — 91 pF, 5%, Mica, SAHA 3HS0006–91
C1, C12 — 220 pF, 5%, Murata Erie
C4 — 9.1 pF, 5%, Murata Erie
C5, C6, C7, C8 — 43 pF, 5%, Mica SAHA 3HS0006–43
C9 — 10 pF, 5%, Murata Erie
C13 — 10
µF,
Electrolytic, 50 V, Panasonic
L1 — 7 Turns, 24 AWG, ID Dia. 0.116″
L2 — 5 Turns, 18 AWG, ID Dia. 0.165″
N1, N2 — SMA Flange Mount, Omni–Spectra
2052–1618–02
R1, R2, R3, R4 — 39 Ohm 1/8 W 5% Rohm
TL1 — Zo = 50 Ohm
TL2 — Zo = 50 Ohm
TL3 — Zo = 50 Ohm
TL4 — See Photomaster
TL5 — Zo = 50 Ohm
TL6 — See Photomaster
TL7 — See Photomaster
TL8 — See Photomaster
TL9 — See Photomaster
TL10 — Zo = 50 Ohm
TL11 — See Photomaster
TL12 — Zo = 50 Ohm
TL13 — Zo = 50 Ohm
TL14 — Zo = 50 Ohm
Board Material: 1/16″ G10,
ε
r = 4.5
Board Material:
2 oz. Cu Clad Both Sides
Figure 7. Schematic of Broadband Demonstration Amplifier (3)
PERFORMANCE CHARACTERISTICS OF
BROADBAND DEMONSTRATION AMPLIFIER
100
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
VCC = 12.5 Vdc
30
35
40
f = 400
MHzMHz
470
512 MHz
80
70
60
50
40
30
20
10
0
430
440
450
460
470
480
VSWR
490
500
510
520
η
c
80
70
60
Po
Pin = 15 W
VCC = 12.5 V
2.0:1
1.5:1
1.0:1
530
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 8. Output Power versus Input Power
Figure 9. Po,
η
c and VSWR versus Frequency
(3) Detailed design and performance information available from Motorola upon request.
MRF650
4
MOTOROLA RF DEVICE DATA
VSWR
η
c , COLLECTOR EFFICIENCY (%)
PACKAGE DIMENSIONS
D
R
3
F
4
K
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
INCHES
MIN
MAX
24.38
25.14
12.45
12.95
5.97
7.62
5.33
5.58
2.16
3.04
5.08
5.33
18.29
18.54
0.10
0.15
10.29
11.17
3.81
4.06
3.81
4.31
2.92
3.30
3.05
3.30
11.94
12.57
MILLIMETERS
MIN
MAX
0.960
0.990
0.490
0.510
0.235
0.300
0.210
0.220
0.085
0.120
0.200
0.210
0.720
0.730
0.004
0.006
0.405
0.440
0.150
0.160
0.150
0.170
0.115
0.130
0.120
0.130
0.470
0.495
1
Q
2
L
B
J
E
N
H
A
U
STYLE 1:
PIN 1.
2.
3.
4.
C
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
R
U
EMITTER
COLLECTOR
EMITTER
BASE
CASE 316–01
ISSUE D
MOTOROLA RF DEVICE DATA
MRF650
5
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