MRF5P21180 datasheet, PDF - EEWORLD Datasheet

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MRF5P21180: DescriptionRF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-1230, CASE 375D-04, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size408KB，9 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MRF5P21180 Overview

RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-1230, CASE 375D-04, 4 PIN

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by MRF5P21180/D

The RF Sub–Micron MOSFET Line

RF Power Field Effect Transistor

N–Channel Enhancement–Mode Lateral MOSFET

Designed for W–CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

•

Typical 2–carrier W–CDMA Performance for V

= 28 Volts,

= 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,

Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over

3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products

Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,

Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Output Power — 38 Watts Avg.

Power Gain — 14 dB

Efficiency — 25.5%

IM3 — 37.5 dBc

ACPR — –41 dBc

•

Internally Matched, Controlled Q, for Ease of Use

•

High Gain, High Efficiency and High Linearity

•

Integrated ESD Protection

•

Designed for Maximum Gain and Insertion Phase Flatness

•

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW

Output Power

•

Excellent Thermal Stability

•

Characterized with Series Equivalent Large–Signal Impedance Parameters

•

Qualified Up to a Maximum of 32 V

Operation

MRF5P21180

2170 MHz, 180 W AVG.,

2 x W–CDMA, 28 V

LATERAL N–CHANNEL

RF POWER MOSFET

CASE 375D–04, STYLE 1

NI–1230

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Gate–Source Voltage

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Symbol

DSS

stg

Value

–0.5, +15

437.5

2.5

–65 to +150

200

Unit

Vdc

Watts

W/°C

°C

NOTE –

CAUTION

– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 0

MOTOROLA RF



Motorola, Inc. 2002

DEVICE DATA

MRF5P21180

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