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MRF3095

Description
MICROWAVE LINEAR POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size49KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF3095 Overview

MICROWAVE LINEAR POWER TRANSISTORS

MRF3095 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, O-CRFM-F2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN EMITTER BALLASTING RESISTORS
Shell connectionEMITTER
Maximum collector current (IC)0.4 A
Collector-based maximum capacity3.5 pF
Collector-emitter maximum voltage22 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandL BAND
JESD-30 codeO-CRFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Minimum power gain (Gp)9 dB
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF3094/D
Microwave Linear
Power Transistors
Designed for Class A, common emitter linear power amplifiers.
Specified 20 Volt, 1.6 GHz Characteristics
Output Power — 0.5, 0.8, 1.6 Watts
Gain — 9.0 – 12 dB
Low Parasitic Microwave Stripline Package
Gold Metallization Diffused Emitter Ballast Resistors
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF3094
MRF3095
9.0 – 12 dB
1.55 – 1.65 GHz
0.5 – 1.6 WATTS
MICROWAVE LINEAR
POWER TRANSISTORS
CASE 328A–03, STYLE 2
MAXIMUM RATINGS
Rating
Collector Base Voltage
Emitter Base Voltage
Collector Emitter Voltage
Collector Current
Operating Junction Temperature
Storage Temperature
MRF3094, 3095
Symbol
VCES
VEBO
VCEO
IC
TJ
Tstg
Limit
50
3.5
22
0.4
200
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
THERMAL CHARACTERISTICS
Max
Characteristic
Ch
i i
Thermal Resistance, Junction to Case
Symbol
S b l
R
θJC
MRF3094
40
MRF3095
35
Unit
U i
°C/W
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF3094 MRF3095
1

MRF3095 Related Products

MRF3095 MRF3094
Description MICROWAVE LINEAR POWER TRANSISTORS MICROWAVE LINEAR POWER TRANSISTORS
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, O-CRFM-F2 FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features BUILT-IN EMITTER BALLASTING RESISTORS BUILT-IN EMITTER BALLASTING RESISTORS
Shell connection EMITTER EMITTER
Maximum collector current (IC) 0.4 A 0.4 A
Collector-based maximum capacity 3.5 pF 3.5 pF
Collector-emitter maximum voltage 22 V 22 V
Configuration SINGLE SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 20 20
highest frequency band L BAND L BAND
JESD-30 code O-CRFM-F2 R-CDFM-F2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Minimum power gain (Gp) 9 dB 10.5 dB
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form FLAT FLAT
Terminal location RADIAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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