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F5D2

Description
45 A, SILICON, RECTIFIER DIODE, DO-5
CategoryLED optoelectronic/LED    photoelectric   
File Size111KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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F5D2 Overview

45 A, SILICON, RECTIFIER DIODE, DO-5

F5D2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionHERMETIC SEALED, TO-46, 2 PIN
Reach Compliance Codecompli
ECCN code3A001.A.2.B
ConfigurationSINGLE
Maximum forward current0.1 A
Maximum forward voltage1.7 V
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Optoelectronic device typesINFRARED LED
Nominal output power9 mW
peak wavelength880 nm
Maximum response time0.0000015 s
Maximum reverse voltage3 V
Semiconductor materialGaAs
shapeROUND
Spectral bandwidth8e-8 m
surface mountNO
perspective20 deg
F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
DESCRIPTION
• The F5D series is a 880 nm LED in a
narrow angle, TO-46 package.
0.030 (0.76)
NOM
0.255 (6.48)
FEATURES
1.00 (25.4)
MIN
• Good optical to mechanical alignment
ANODE
(CASE)
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
0.100 (2.54)
0.050 (1.27)
1
1
0.040 (1.02)
0.040 (1.02)
45°
3
Ø0.020 (0.51) 2X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2
!
steradians.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 10µs; 100Hz)
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
I
F
V
R
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
3
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25°C) (All measurements made under pulse conditions)
MIN
TYP
MAX
UNITS
SYMBOL
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power F5D1
(7)
Total Power F5D2
(7)
Total Power F5D3
(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
"
P
#
V
F
I
R
P
O
P
O
P
O
t
r
t
f
12.0
9.0
10.5
880
±8
1.5
1.5
1.7
10
nm
Deg.
V
µA
mW
mW
mW
µs
µs
2001 Fairchild Semiconductor Corporation
DS300286
4/24/01
1 OF 3
www.fairchildsemi.com

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Description 45 A, SILICON, RECTIFIER DIODE, DO-5 45 A, SILICON, RECTIFIER DIODE, DO-5 45 A, SILICON, RECTIFIER DIODE, DO-5
Is it Rohs certified? conform to conform to conform to
Maker Fairchild Fairchild Fairchild
package instruction HERMETIC SEALED, TO-46, 2 PIN HERMETIC SEALED, TO-46, 2 PIN HERMETIC SEALED, TO-46, 2 PIN
Reach Compliance Code compli compli compli
ECCN code 3A001.A.2.B 3A001.A.2.B 3A001.A.2.B
Configuration SINGLE SINGLE SINGLE
Maximum forward current 0.1 A 0.1 A 0.1 A
Maximum forward voltage 1.7 V 1.7 V 1.7 V
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 1 1
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Optoelectronic device types INFRARED LED INFRARED LED INFRARED LED
Nominal output power 9 mW 12 mW 10.5 mW
peak wavelength 880 nm 880 nm 880 nm
Maximum response time 0.0000015 s 0.0000015 s 0.0000015 s
Maximum reverse voltage 3 V 3 V 3 V
Semiconductor material GaAs GaAs GaAs
shape ROUND ROUND ROUND
Spectral bandwidth 8e-8 m 8e-8 m 8e-8 m
surface mount NO NO NO
perspective 20 deg 20 deg 20 deg
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