MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF166/D
The RF MOSFET Line
RF Power
Field Effect Transistors
•
Low Crss — 4.5 pF @ VDS = 28 V
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500
MHz.
•
MRF166C — Typical Performance at 400 MHz, 28 Vdc
Output Power = 20 W
Gain = 17 dB
Efficiency = 55%
•
Optional 4–Lead Flange Package (MRF166)
•
Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
•
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
MRF166
MRF166C
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 211–07, STYLE 2
G
S
CASE 319–07, STYLE 3
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
±
40
4.0
70
0.4
– 65 to 150
200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
2.5
Unit
°C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF166 MRF166C
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 5.0 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0 V)
V(BR)DSS
IDSS
IGSS
65
—
—
—
—
—
—
1.0
1.0
V
mA
µA
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
Forward Transconductance
(VDS = 10 V, ID = 1.5 A)
VGS(th)
gfs
1.0
600
3.0
800
6.0
—
V
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
30
35
4.5
—
—
—
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)
MRF166C
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA,
Load VSWR 30:1 at All Phase Angles)
MRF166
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA,
Load VSWR 30:1 at All Phase Angles)
Series Equivalent Input Impedance
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Series Equivalent Output Impedance
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Gps
η
ψ
15
55
19
65
—
—
dB
%
Gps
η
ψ
14
50
17
55
—
—
dB
%
NF
—
2.5
—
dB
No Degradation in Output Power
No Degradation in Output Power
Zin
Zout
—
—
3.99 – j12.2
14.15 – j6.51
—
—
Ohms
Ohms
MRF166 MRF166C
2
MOTOROLA RF DEVICE DATA
R2
R3
C4
C13
+
–
D1
C8
RFC2
R4
C9
R1
RF INPUT
Z1
C1
C2
C3
Z2
L1
Z3
L2
Z4
D.U.T.
C10
RFC1
C11
+
–
C12
VDD = 28 V
+
Vdc
–
Z5
Z6
Z7
RF OUTPUT
C7
C5
C6
C1, C7 — 270 pF Chip Capacitor
C2, C6 — Johanson Trimmer Capacitor, 2 – 20 pF
C3 — 21 pF Mini Unelco
C4, C8, C9 — 0.01
µF
C5 — 18 pF Mini Unelco
C10, C11 — 680 pF Feed Through
C12, C13 — 50
µF,
50 V
D1 — 1N5925A Motorola Zener
Board Material — Teflon fiberglass
2 oz. Copper clad both sides,
ε
r = 2.55
0.060″ Dielectric Thickness
L1 — #18 AWG, 2 Turns, 0.25″ ID
0.15″ Wide
L2 — #18 AWG Hairpin 0.7″ long, bend into hairpin
RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 220
Ω
1/2 Watt
R2 — 1.8 kΩ 1/4 Watt
R3 — 10 kΩ, 10 Turns Bourns
R4 — 10 k 1/4 Watt
Z1 — Microstrip Line 0.150″ wide, 0.420″ long
Z2 — Microstrip Line 0.150″ wide, 0.350″ long
Z3 — Microstrip Line 0.150″ wide, 0.350″ long
Z4 — Microstrip Line 0.150″ wide, 0.450″ long
Z5 — Microstrip Line 0.150″ wide, 1.1″ long
Z6 — Microstrip Line 0.150″ wide, 0.650″ long
Z7 — Microstrip Line 0.150″ wide, 0.200″ long
Figure 1. MRF166C 400 MHz Test Circuit
C10
C9
RFC2
R4
C6
R3
RF INPUT
L1
C1
C2
D.U.T.
C3
C4
C5
RF OUTPUT
RFC1
C11
C12
+
–
VDD = 28 V
+
C13
Vdc
–
R2
R1
C7
C8
+
–
D1
L2
L3
C1, C2 — 406 ARCO
C3 — 39 pF ATC 100 Mil Chip Cap
C4 — 403 ARCO
C5 — 470 pF ATC 100 Mil Chip Cap
C6, C7, C9, C13 — 0.01
µF
C8, C12 — 50
µF,
50 V
C10, C11 — 680 pF Feed Through
D1 — 1N5925A Motorola Zener
L1 — #20 AWG 2 Turns, 0.235″ ID, 0.10″ OD
L2 — #18 AWG 2 Turns, 0.225″ ID, 0.22″ OD
L3 — #18 AWG 2 Turns, 0.325″ ID, 0.13″ OD
RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 10 kΩ, 10 Turn Bourns
R2 — 1.8 kΩ 1/4 Watt
R3 — 120
Ω
1/2 Watt
R4 — 10 kΩ 1/4 Watt
Board Material — 0.062″ G10, 2 oz Cu Clad Double Sided
Figure 2. MRF166 150 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF166 MRF166C
3
TYPICAL CHARACTERISTICS
100
I D, DRAIN CURRENT (AMPS)
50
C, CAPACITANCE (pF)
Coss
Ciss
10
TC = 25°C
20
10
5
VGS = 0 V
f = 1 MHz
0
1
Crss
2
1
5
10
15
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
25
0.1
0
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
100
Figure 3. Capacitance versus Drain–Source Voltage
Figure 4. DC Safe Operating Area
MRF166
35
Po, OUTPUT POWER (WATTS)
Po, OUTPUT POWER (WATTS)
30
25
20
15
10
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.7
0.8
VDS = 28 V
IDQ = 25 mA
f = 150 MHz
32
28
24
0.3 W
20
16
12
8
4
0
12
14
16
18
20
22
24
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
26
28
0.1 W
f = 150 MHz
IDQ = 25 mA
Pin = 0.6 W
Figure 5. Output Power versus Input Power
Figure 6. Output Power versus Voltage
16
14
12
10
8
6
4
2
0
0
0.1
0.2
VDS = 13.5 V
IDQ = 25 mA
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.7
0.8
f = 150 MHz
Po, OUTPUT POWER (WATTS)
Figure 7. Output Power versus Input Power
MRF166 MRF166C
4
MOTOROLA RF DEVICE DATA
MRF166C
35
Po, OUTPUT POWER (WATTS)
30
25
20
500 MHz
15
10
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.7
0.8
VDS = 28 V
IDQ = 100 mA
f = 400 MHz
Po, OUTPUT POWER (WATTS)
16
14
12
10
8
6
4
2
0
0
0.1
0.2
VDS = 13.5 V
IDQ = 100 mA
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.7
0.8
f = 400 MHz
Figure 8. Output Power versus Input Power
Figure 9. Output Power versus Input Power
32
28
Po, OUTPUT POWER (WATTS)
24
20
16
12
8
4
0
12
14
16
18
20
22
24
VDS, DRAIN–SOURCE (VOLTS)
26
28
0.2 W
0.4 W
f = 400 MHz
IDQ = 100 mA
Pin = 0.8 W
Figure 10. Output Power versus Voltage
400
f = 500 MHz
f
MHz
VDD = 28 V, IDQ = 100 mA
Zin
OHMS
(Pout = 20 W)
100
200
400
500
11.0 – j21.0
4.20 – j12.6
1.90 – j5.80
1.50 – j4.10
8.50 – j10.0
6.00 – j9.00
4.50 – j6.70
4.20 – j5.40
ZOL*
OHMS
200
Zin
100
f = 500 MHz
400
200
ZOL*
100
Zo = 50
Ω
ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage and
frequency.
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF166 MRF166C
5
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