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EL817SATB-G

CategoryLED optoelectronic/LED   
File Size745KB,14 Pages
ManufacturerEVERLIGHT
Websitehttp://www.everlight.com/
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EL817SATB-G Parametric

Parameter NameAttribute value
Product CategoryTransistor Output Optocouplers
ManufacturerEVERLIGHT
RoHSDetails
Output TypeNPN Phototransistor
Number of Channels1 Channel
Isolation Voltage5000 Vrms
PackagingReel
Factory Pack Quantity1000
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G Series
Schematic
Features:
Halogens free.
Current transfer ratio
(CTR: 50~600% at I
F
=5mA, V
CE
=5V)
High isolation voltage between input
and output (Viso=5000 V rms )
Creepage distance >7.62 mm
Operating temperature up to +110°C
Compact small outline package
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved
CQC approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL817-G series of devices each consist of an infrared emitting diodes, optically
coupled to a phototransistor detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
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