VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 16 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified
JEDEC
®
-JESD47
according
to
Available
TO-220AC
Base
cathode
2
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
Cathode
3
Anode
DESCRIPTION
VS-HFA16TB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120... is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED
®
product line
features extremely low values of peak recovery current
(I
RRM
) and does not exhibit any tendency to “snap-off”
during the t
b
portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-220AC
16 A
1200 V
2.3 V
30 ns
150 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
1200
16
190
64
151
60
-55 to +150
W
°C
A
UNITS
V
Revision: 14-Jul-15
Document Number: 94060
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 16 A
Maximum forward voltage
V
FM
I
F
= 32 A
I
F
= 16 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
1200
-
-
-
-
-
-
-
TYP.
-
2.5
3.2
2.3
0.75
375
27
8.0
MAX.
-
3.0
3.93
2.7
20
2000
40
-
μA
pF
nH
V
UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5 and 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
b
See fig. 8
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 16 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
30
90
164
5.8
8.3
260
680
120
76
MAX.
-
135
245
10
15
675
1838
-
A/μs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-220AC
SYMBOL
T
lead
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
0.50
2.0
0.07
-
MAX.
300
0.83
80
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
K/W
UNITS
°C
HFA16TB120
Revision: 14-Jul-15
Document Number: 94060
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
1000
T
J
= 150 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (µA)
100
T
J
= 125 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
1
1
T
J
= 25 °C
0.1
0.1
0
2
4
6
8
0.01
0
94060_02
200
400
600
800
1000
1200
94060_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
1
1
94060_03
10
100
1000
10 000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Z
thJC
- Thermal Response
0.1
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t1
t2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
94060_04
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 14-Jul-15
Document Number: 94060
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
1600
1400
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
270
220
I
F
= 16 A
I
F
= 8 A
1200
t
rr
(ns)
Q
rr
(nC)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
170
1000
800
600
400
200
0
100
120
70
20
100
94060_05
1000
dI
F
/dt (A/µs)
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
30
25
20
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
10 000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
dI
(rec)M
/dt (A/µs)
1000
I
RR
(A)
I
F
= 16 A
I
F
= 8 A
1000
15
10
5
0
100
100
10
100
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. di
F
/dt (Per Leg)
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt (Per Leg)
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 14-Jul-15
Document Number: 94060
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
4
5
4
6
7
HF
2
-
-
-
-
-
-
-
A
3
16
4
TB
5
120 PbF
6
7
Vishay Semiconductors product
HEXFRED
®
family
Electron irradiated
Current rating (16 = 16 A)
Package:
TB = TO-220AC
Voltage rating (120 = 1200 V)
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-HFA16TB120PbF
VS-HFA16TB120-N3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220ACPbF
TO-220AC-N3
www.vishay.com/doc?95221
www.vishay.com/doc?95224
www.vishay.com/doc?95068
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Revision: 14-Jul-15
Document Number: 94060
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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