MR5008 datasheet, PDF - EEWORLD Datasheet

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MR5008: Description50 A, 100 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size17KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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MR5008 Overview

50 A, 100 V, SILICON, RECTIFIER DIODE

MR5008 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	500 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	50 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	5 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END

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MR5000 - MR5010

PRV : 50 - 1000 Volts

Io : 50 Amperes

FEATURES :

*

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

AUTOMOTIVE

RECTIFIER DIODES

5

°

NOM

0.342 (8.69)

0.332 (8.43)

0.246 (6.25)

0.234 (5.94)

0.175 (4.45)

0.165 (4.19)

MECHANICAL DATA :

*

Case : Molded plastic

Epoxy : UL94V-O rate flame retardant

Terminals : Terminal are readily solderable

Polarity : Cathode polarity band

Mounting position : Any

Weight : 1.8 grams

0.222 (5.64)

0.218 (5.54)

Dimensions in inches and ( millimeter )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Average Rectified Forward Current Tc = 150°C

Peak Forward Surge Current Single half sine

wave superimposed on rated load (JEDEC Method)

Maximum Forward Voltage at I

F

= 50 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Thermal Resistance (Note 1)

Junction Temperature Range

Storage Temperature Range

Marking Code

Ta = 25

°C

Ta = 100

°C

SYMBOL

V

RRM

V

RMS

V

DC

I

F(AV)

MR

5000

50

35

50

MR

5001

100

70

100

MR

5002

200

140

200

MR

5004

400

280

400

50

MR

5006

600

420

600

MR

5008

800

560

800

MR

5010

1000

700

1000

UNIT

Volts

Amps.

I

FSM

V

F

I

R

I

R(H)

R

θ

JC

T

J

T

STG

500

1.1

5.0

1.0

0.8

- 65 to + 175

Amps.

Volts

µA

mA

°C/W

°C

Note

: (1) Thermal resistance from junction to case. Single side cooled.

UPDATE : OCTOBER 19, 2000

MR5008 Related Products

	MR5008	MR5010	MR5006	MR5004	MR5002	MR5001	MR5000
Description	50 A, 100 V, SILICON, RECTIFIER DIODE	50 A, 100 V, SILICON, RECTIFIER DIODE	50 A, 100 V, SILICON, RECTIFIER DIODE	50 A, 100 V, SILICON, RECTIFIER DIODE	50 A, 100 V, SILICON, RECTIFIER DIODE	50 A, 100 V, SILICON, RECTIFIER DIODE	50 A, 100 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	-	conform to
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli	compli	compli	compli	compli	-	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	-	-
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	-	1.1 V
JESD-30 code	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	-	O-PEDB-N2
Maximum non-repetitive peak forward current	500 A	500 A	500 A	500 A	500 A	-	500 A
Number of components	1	1	1	1	1	-	1
Phase	1	1	1	1	1	-	1
Number of terminals	2	2	2	2	2	-	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	-	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-	-65 °C
Maximum output current	50 A	50 A	50 A	50 A	50 A	-	50 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	-	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	-	DISK BUTTON
Maximum repetitive peak reverse voltage	800 V	1000 V	600 V	400 V	200 V	-	50 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	-	5 µA
surface mount	YES	YES	YES	YES	YES	-	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD
Terminal location	END	END	END	END	END	-	END

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