BF904; BF904R
N-channel dual gate MOS-FETs
Rev. 06 — 13 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
FEATURES
•
Specially designed for use at 5 V supply voltage
•
Short channel transistor with high transfer admittance to
input capacitance ratio
•
Low noise gain controlled amplifier up to 1 GHz
•
Superior cross-modulation performance during AGC.
APPLICATIONS
•
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
BF904; BF904R
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
This product is supplied in anti-static packing to
prevent damage caused by electrostatic discharge
during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A
and SNW-FQ-302B.
PINNING
PIN
1
2
3
4
SYMBOL
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
DESCRIPTION
handbook, halfpage
d
3
d
handbook, halfpage
4
3
4
g
2
g1
g
2
g1
1
Top view
2
MAM124
2
s,b
Top view
1
MAM125 - 1
s,b
BF904 marking code:
%MC.
BF904R marking code:
%MD.
Fig.1 Simplified outline (SOT143B) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
y
fs
C
ig1-s
C
rs
F
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
f = 1 MHz
f = 800 MHz
PARAMETER
drain-source voltage
CONDITIONS
−
−
−
−
22
−
−
−
MIN.
−
−
−
−
25
2.2
25
2
TYP.
MAX.
7
30
200
150
30
2.6
35
−
UNIT
V
mA
mW
°C
mS
pF
fF
dB
Rev. 06 - 13 November 2007
2 of 14
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
I
D
I
G1
I
G2
P
tot
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
BF904
BF904R
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
storage temperature
operating junction temperature
see Fig.3
T
amb
≤
50
°C;
note 1
T
amb
≤
40
°C;
note 1
−
−
−65
−
CONDITIONS
−
−
−
−
MIN.
BF904; BF904R
MAX.
7
30
±10
±10
200
200
+150
150
V
UNIT
mA
mA
mA
mW
mW
°C
°C
handbook, halfpage
250
MRA770
P
tot
(mW)
200
BF904
150
BF904R
100
50
0
0
50
100
150
200
Tamb (
o
C)
Fig.3 Power derating curves.
Rev. 06 - 13 November 2007
3 of 14
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
BF904
BF904R
R
th j-s
thermal resistance from junction to soldering point
BF904
BF904R
Notes
1. Device mounted on a printed-circuit board.
2. T
s
is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
I
G1-SS
I
G2-SS
Note
1. R
G1
connects gate 1 to V
GG
= 5 V; see Fig.20.
PARAMETER
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
CONDITIONS
V
G2-S
= V
DS
= 0; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 20
µA
V
G1-S
= V
DS
= 5 V; I
D
= 20
µA
V
G2-S
= 4 V; V
DS
= 5 V;
R
G1
= 120 kΩ; note 1
V
G2-S
= V
DS
= 0; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0; V
G2-S
= 5 V
note 2
T
s
= 92
°C
T
s
= 78
°C
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BF904; BF904R
VALUE
500
550
290
360
UNIT
K/W
K/W
K/W
K/W
MIN.
6
6
0.5
0.5
0.3
0.3
8
−
−
MAX.
15
15
1.5
1.5
1
1.2
13
50
50
UNIT
V
V
V
V
V
V
mA
nA
nA
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
°C;
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 10 mA; unless otherwise specified.
SYMBOL
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F
PARAMETER
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
noise figure
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 800 MHz; G
S
= G
Sopt
; B
S
= B
Sopt
CONDITIONS
pulsed; T
j
= 25
°C
MIN.
22
−
1
1
−
−
−
TYP.
25
2.2
1.5
1.3
25
1
2
MAX.
30
2.6
2
1.6
35
1.5
2.8
UNIT
mS
pF
pF
pF
fF
dB
dB
reverse transfer capacitance f = 1 MHz
Rev. 06 - 13 November 2007
4 of 14
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
40
Y fs
(mS)
30
MLD268
MRA769
handbook, halfpage
gain 0
reduction
(dB)
10
20
20
30
10
40
50
0
50
0
50
100
150
o
T j ( C)
0
1
2
3
VAGC (V)
4
f = 50 MHz.
Fig.4
Transfer admittance as a function of the
junction temperature; typical values.
Fig.5
Typical gain reduction as a function of
the AGC voltage.
handbook, halfpage
120
MRA771
MLD270
20
ID
(mA)
15
2V
V G2 S = 4 V
3V
2.5 V
Vunw
(dB
µ
V)
110
100
10
1.5 V
90
5
1V
80
0
10
20
30
40
50
gain reduction (dB)
0
0
0.4
0.8
1.2
2.0
1.6
V G1 S (V)
V
DS
= 5 V; V
GG
= 5 V; f
w
= 50 MHz.
f
unw
= 60 MHz; T
amb
= 25
°C;
R
G1
= 120 kΩ.
Fig.6
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.20.
V
DS
= 5 V.
T
j
= 25
°C.
Fig.7 Transfer characteristics; typical values.
Rev. 06 - 13 November 2007
5 of 14
京公网安备 11010802033920号
EEWORLD
