DG2003/2004/2005
New Product
Vishay Siliconix
Low-Voltage Dual SPST Analog Switch
FEATURES
D
D
D
D
D
D
D
Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - r
DS(on
): 1.2
W
Fast Switching - 14 ns
Low Charge Injection - Q
INJ
: 1 pC
Low Power Consumption
TTL/CMOS Compatible
MSOP-8 Package
BENEFITS
D
D
D
D
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
D
D
D
D
D
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
DESCRIPTION
The DG2003/2004/2005 are dual single-pole/single-throw
monolithic CMOS analog switch designed for high
performance switching of analog signals. Combining low
power, fast switching, low on-resistance (r
DS(on)
: 1.2
W)
and
small physical size (MSOP-8), the DG2003/2004/2005 are
ideal for portable and battery powered applications requiring
high performance and efficient use of board space.
The DG2003/2004/2005 are built on Vishay Siliconix’s low
voltage JI2 process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2003
NO
1
COM
1
IN
2
GND
V+
IN
1
COM
2
NO
2
NC
1
COM
1
IN
2
GND
DG2004
V+
IN
1
COM
2
NC
2
NO
1
COM
1
IN
2
GND
DG2005
V+
IN
1
COM
2
NC
2
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
Top View
Top View
Top View
TRUTH TABLE - DG2003
Logic
0
1
TRUTH TABLE - DG2004
Logic
0
1
TRUTH TABLE - DG2005
Logic
0
1
NO
Off
On
NC
On
Off
NO
1
Off
On
NC
2
On
Off
ORDERING INFORMATION
Temp Range
-40 to 85°C
Package
MSOP-8
Part Number
DG2003DQ
DG2004DQ
DG2005DQ
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
www.vishay.com
1
DG2003/2004/2005
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO
a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . .
"50
mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"200
mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)
b
MSOP-8
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 25_C
New Product
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Flatness
d
V
NO
, V
NC
,
V
COM
r
ON
r
ON
Flatness
I
NO(off),
I
NC(off)
I
COM(off)
Channel-On Leakage Current
f
I
COM(on)
V+ = 2.0 V, V
COM
= 1.0 V, I
NO
, I
NC
= 1 mA
V+ = 2.0 V, V
COM
= 0 to V+, I
NO
, I
NC
= 1 mA
Full
Room
Full
d
Room
Room
Full
d
Room
Full
d
Room
Full
d
–500
–4.0
–500
–4.0
–500
–4.0
0
7.0
12.5
5
500
4.0
500
4.0
500
4.0
pA
nA
pA
nA
pA
nA
V+
10.0
16.0
W
V
Limits
–40 to 85_C
Symbol
V+ = 2.0 V,
"10%,
V
IN
= 0.4 or 1.6 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Switch Off Leakage Current
f
V+ = 2.2 V
V
NO,
V
NC
= 0.5 V/1.5 V, V
COM
= 1.5 V/0.5 V
V+ = 2.2 V, V
NO,
V
NC
= V
COM
= 0.5 V/1.5 V
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
d
Input Current
V
INH
Full
Full
Full
V
IN
= 0 or V+
Full
1.6
0.4
5
–1
1
V
pF
mA
V
INL
C
in
I
INL
or I
INH
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
NO, NC Off Capacitance
d
Channel-On
Capacitance
d
t
ON
t
OFF
Q
INJ
OIRR
X
TALK
C
NO(off),
C
NC(off)
C
ON
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W,
Figure 3
R
L
= 50
W
C
L
= 5 pF, f = 1 MHz
W,
V
NO
or V
NC
= 1.5 V, R
L
= 300
W,
C
L
= 35 pF
Figures 1 and 2
Room
Full
d
Room
Full
d
Room
Room
Room
Room
V
IN
= 0 or V+, f = 1 MHz
Room
110
30
22
2
–61
–67
53
pF
dB
47
48
37
48
ns
pC
Power Supply
Power Supply Range
Power Supply Current
d
Power Consumption
V+
I+
P
C
V
IN
= 0 or V+
1.8
0.02
2.2
1.0
2.2
V
mA
mW
www.vishay.com
2
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
DG2003/2004/2005
New Product
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Flatness
d
V
NO
, V
NC
,
V
COM
r
ON
r
ON
Flatness
I
NO(off),
I
NC(off)
I
COM(off)
Channel-On Leakage Current
f
I
COM(on)
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 10 mA
V+ = 2.7 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
–500
–6.0
–500
–6.0
–500
–6.0
0
2.2
2.4
0.5
500
6.0
500
6.0
500
6.0
pA
nA
pA
nA
pA
nA
V+
3.5
3.7
W
V
Vishay Siliconix
Limits
–40 to 85_C
Symbol
V+ = 3 V,
"10%,
V
IN
= 0.4 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Switch Off Leakage Current
f
V+ = 3.3 V
V
NO,
V
NC
= 1 V/3 V, V
COM
= 3 V/1 V
V+ = 3.3 V, V
NO,
V
NC
= V
COM
= 1 V/3 V
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
d
Input Current
V
INH
Full
Full
Full
V
IN
= 0 or V+
Full
2
0.4
5
–1
1
V
pF
mA
V
INL
C
in
I
INL
or I
INH
Dynamic Characteristics
Turn-On Time
d
Turn-Off
Time
d
t
ON
t
OFF
Q
INJ
OIRR
X
TALK
C
NO(off),
C
NC(off)
C
ON
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W,
Figure 3
R
L
= 50
W
C
L
= 5 pF, f = 1 MHz
W,
V
NO
or V
NC
= 2.0 V, R
L
= 300
W,
C
L
= 35 pF
Figure 1 and 2
Room
Full
Room
Full
Room
Room
Room
Room
V
IN
= 0 or V+, f = 1 MHz
Room
110
19
17
1
–61
–67
53
pF
dB
35
36
31
34
ns
Charge Injection
d
Off-Isolation
d
Crosstalk
d
NO, NC Off Capacitance
d
Channel-On
Capacitance
d
pC
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
V+
I+
P
C
V
IN
= 0 or V+
2.7
0.02
3.3
1.0
3.3
V
mA
mW
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
www.vishay.com
3
DG2003/2004/2005
Vishay Siliconix
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Flatness
d
V
NO
, V
NC
,
V
COM
r
ON
r
ON
Flatness
I
NO(off),
I
NC(off)
Switch Off Leakage Current
I
COM(off)
Channel-On Leakage Current
I
COM(on)
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 10 mA
V+ = 4.5 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
–1.0
–8.0
–1.0
–8.0
–1.0
–8.0
0
1.2
1.6
0.2
1.0
8.0
1.0
8.0
1.0
8.0
nA
V+
2.5
2.7
W
V
New Product
Limits
–40 to 85_C
Symbol
V+ = 5 V,
"10%,
V
IN
= 0.8 or 2.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
V+ = 5.5 V
V
NO,
V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
V+ = 5.5 V, V+ = 5.5 V
V
NO,
V
NC
= V
COM
= 1 V/4.5 V
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
V
INH
Full
Full
Full
V
IN
= 0 or V+
Full
2.4
0.8
5
–1
1
V
pF
mA
V
INL
C
in
I
INL
or I
INH
Dynamic Characteristics
Turn-On Time
d
Turn-Off
Time
d
t
ON
t
OFF
Q
INJ
OIRR
X
TALK
C
NO(off),
C
NC(off)
C
ON
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W,
Figure 3
R
L
= 50
W
C
L
= 5 pF, f = 1 MHz
W,
V
NO
or V
NC
= 3 V, R
L
= 300
W,
C
L
= 35 pF
Figure 1 and 2
Room
Full
Room
Full
Room
Room
Room
Room
V
IN
= 0 or V+, f = 1 MHz
Room
110
13
19
1
–61
–67
51
pF
dB
28
31
22
31
ns
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Source-Off Capacitance
d
Channel-On
Capacitance
d
pC
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for design aid only, not guaranteed nor subject to production testing.
Guarantee by design, nor subjected to production test.
V
IN
= input voltage to perform proper function.
Guaranteed by 5-V leakage testing, not production tested.
V+
I+
P
C
V
IN
= 0 or V+
4.5
0.02
5.5
1.0
5.5
V
mA
mW
www.vishay.com
4
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
DG2003/2004/2005
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
ON
vs. V
COM
Supply Voltage
8
7
r
ON
– On-Resistance (
W
)
6
5
4
3
V+ = 3 V/I
S
= 100 mA
2
1
0
0
1
2
3
4
5
V+ = 5 V/I
S
= 100 mA
r
ON
– On-Resistance (
W
)
V+ = 2 V/I
S
= 1 mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
85_C
V+ = 3 V
–40_C
0_C
25_C
Vishay Siliconix
r
ON
vs. Analog Voltage and Temperature
V
COM
– Analog Voltage (V)
V
COM
– Analog Voltage (V)
Supply Current vs. Temperature
10
V+ = 5 V
V
IN
= 0 V
I+ – Supply Current (nA)
10 m
1m
100
m
10
m
1
m
100 n
10 n
0.01
–60
1n
–40
–20
0
20
40
60
80
100
Supply Current vs. Input Switching Frequency
1
0.1
I+ – Supply Current (A)
10
100
1K
10 K
100 K
1M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
10000
V+ = 5 V
200
150
100
Leakage Current (pA)
50
Leakage vs. Analog Voltage
V+ = 5 V
T = 25_C
1000
Leakage Current (pA)
100
I
NO(off)
/I
NC(off)
I
COM(on)
I
COM(on)
0
I
COM(off)
–50
–100
I
NO(off)
/I
NC(off)
10
I
COM(off)
1
–60
–150
–200
–40
–20
0
20
40
60
80
100
0
1
2
3
4
5
Temperature (_C)
V
COM
, V
NO
, V
NC
– Analog Voltage
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
www.vishay.com
5
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