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BF512235

Description
RF JFET Transistors N-Channel Single 20V 30mA
Categorysemiconductor    Discrete semiconductor   
File Size123KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF JFET Transistors N-Channel Single 20V 30mA

BF512235 Parametric

Parameter NameAttribute value
Product CategoryRF JFET Transistors
ManufacturerNXP
RoHSDetails
Transistor TypeJFET
TechnologySi
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Current12 mA
Pd - Power Dissipation250 mW
Mounting StyleSMD/SMT
Package / CaseSOT-23
PackagingReel
ConfigurationSingle
Gate-Source Cutoff Voltage2.2 V
ProductRF JFET
Factory Pack Quantity10000
TypeJFET
Unit Weight0.000282 oz
SO
T2
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Rev. 4 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
3
1.2 Features and benefits
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage.
1.3 Applications
Impedance converters in e.g. electret microphones and infrared detectors
VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GSoff
I
DSS
Quick reference data
Parameter
drain-source
voltage (DC)
gate-source cut-off
voltage
drain current
I
D
= 200
A;
V
DS
= 15 V
V
GS
= 0 V; V
DS
= 15 V
BF556A
BF556B
BF556C
P
tot
y
fs
total power
dissipation
forward transfer
admittance
T
amb
25
C
V
GS
= 0 V; V
DS
= 15 V
3
6
11
-
4.5
-
-
-
-
-
7
13
18
250
-
mA
mA
mA
mW
mS
Conditions
Min
-
0.5
Typ
-
-
Max
30
7.5
Unit
V
V

BF512235 Related Products

BF512235 BF556A235
Description RF JFET Transistors N-Channel Single 20V 30mA RF JFET Transistors N-Channel Single u0027+/- 30V 7mA
Product Category RF JFET Transistors RF JFET Transistors
Manufacturer NXP NXP
RoHS Details Details
Transistor Type JFET JFET
Technology Si Si
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 20 V 30 V
Vgs - Gate-Source Breakdown Voltage 20 V 30 V
Id - Continuous Drain Current 12 mA 7 mA
Pd - Power Dissipation 250 mW 250 mW
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-23 SOT-23
Packaging Reel Reel
Configuration Single Single
Gate-Source Cutoff Voltage 2.2 V 7.5 V
Product RF JFET RF JFET
Factory Pack Quantity 10000 10000
Type JFET JFET
Unit Weight 0.000282 oz 0.000282 oz
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