Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
Voltage
Diode Reverse Recovery Time
I
F
= 13 A,
d
iF
/d
t
= 100 A/µs
Diode Reverse Recovery Charge
2.1
0.7
31
21
1.2
A
V
nS
nC
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
50°C/W when mounted
on a 1in
2
pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2
Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6670A Rev F (W)
FDS6670A
Typical Characteristics
50
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
3.5V
40
I
D
, DRAIN CURRENT (A)
1.6
V
GS
= 3.5V
1.4
4.5V
30
4.0V
20
1.2
4.0V
4.5V
5.0V
3.0V
10
1
10V
0
0
0.5
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1.5
0.8
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13A
V
GS
= 10V
1.4
I
D
= 6.5A
0.02
1.2
0.015
T
A
= 125
o
C
0.01
T
A
= 25
o
C
0.005
1
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
40
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
10
T
A
= 125
o
C
1
30
T
A
=125
o
C
20
25
o
C
-55
o
C
10
0.1
25
o
C
-55
o
C
0.01
0.001
0
2
2.25
2.5
2.75
3
3.25
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670A Rev F (W)
FDS6670A
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13A
8
15V
CAPACITANCE (pF)
V
DS
= 10V
6
20V
4
3000
f = 1MHz
V
GS
= 0 V
2500
C
iss
2000
1500
1000
C
oss
500
2
C
rss
0
0
10
20
30
Q
g
, GATE CHARGE (nC)
40
50
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
100µs
R
DS(ON)
LIMIT
P(pk), PEAK TRANSIENT POWER (W)
80
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10
1m
10ms
100ms
1s
60
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
10s
1
DC
40
0.1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
20
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670A Rev F (W)
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not intended to be an exhaustive list of all such trademarks.
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systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
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Not In Production
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that has been discontinued by Fairchild semiconductor.
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