VT6K1
Nch+Nch 20V 100mA Small Signal MOSFET
Datasheet
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Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
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Features
1) Low on - resistance.
2) Small package(VMT6)
3) Low voltage drive(1.2V drive)
20V
3.5Ω
±100mA
150mW
VMT6
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Inner circuit
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Packaging specifications
Packing
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Application
Embossed
Tape
180
8
8000
T2R
K01
Value
20
±100
±400
±8
150
120
150
-55 to +150
Unit
V
mA
mA
V
mW
℃
℃
Reel size (mm)
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Switching
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
total
element
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
T
j
T
stg
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© 2016 ROHM Co., Ltd. All rights reserved.
1/10
20160629 - Rev.001
VT6K1
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
total
element
Symbol
R
thJA
Values
Min.
-
-
Typ.
-
-
Max.
-
-
Unit
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Electrical characteristics (T
a
= 25°C)
<Tr1 and Tr2>
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Symbol
Conditions
Values
Min.
20
-
-
-
0.3
-
-
-
-
-
-
180
Typ.
-
29.0
-
-
-
-1.6
2.5
3.0
3.8
4.5
6.0
-
Max.
-
-
1
±10
1.0
-
3.5
4.2
5.3
9.0
18.0
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 20V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±8V
V
DS
= 10V, I
D
= 100μA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 100mA
Static drain - source
on - state resistance
R
DS(on)*3
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 1.5V, I
D
= 20mA
V
GS
= 1.2V, I
D
= 10mA
Forward Transfer
Admittance
|Y
fs
|
*3
V
DS
= 10V, I
D
= 100mA
Ω
mS
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© 2016 ROHM Co., Ltd. All rights reserved.
2/10
20160629 - Rev.001
VT6K1
Datasheet
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Electrical characteristics
(T
a
= 25°C) <Tr1 and Tr2>
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*3
t
r*3
t
d(off)*3
t
f*3
Conditions
Min.
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
10V,V
GS
= 4.5V
Values
Typ.
7.1
3.3
1.7
5
4
20
38
Max.
-
-
-
-
-
Unit
-
-
-
-
-
-
-
pF
I
D
= 50mA
R
L
= 200Ω
R
G
= 10Ω
ns
-
-
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
<Tr1 and Tr2>
Parameter
Forward voltage
Symbol
V
SD*3
Conditions
Min.
V
GS
= 0V, I
S
= 100mA
-
Values
Typ.
-
Max.
1.2
V
Unit
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Each terminal mounted on a reference land.
*3 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved.
3/10
20160629 - Rev.001
VT6K1
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Drain Current Derating Curve
Fig.3 Typical Output Characteristics(I)
Fig.4 Typical Output Characteristics(II)
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© 2016 ROHM Co., Ltd. All rights reserved.
4/10
20160629 - Rev.001
VT6K1
Datasheet
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Electrical characteristic curves
Fig.5 Breakdown Voltage vs.
Junction Temperature
Fig.6 Typical Transfer Characteristics
Fig.7 Gate Threshold Voltage vs.
Junction Temperature
Fig.8 Forward Transfer Admittance vs.
Drain Current
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© 2016 ROHM Co., Ltd. All rights reserved.
5/10
20160629 - Rev.001
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