DSA10C150PB
preliminary
Schottky Diode Gen ²
V
RRM
I
FAV
V
F
=
= 2x
=
150 V
5A
0.71 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA10C150PB
Backside: cathode
1
2
3
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
TO-220
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
DSA10C150PB
preliminary
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.54
19.4
4.8
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
24 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
29
30
150
V
mΩ
K/W
K/W
W
A
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max.
150
150
100
0.9
0.86
0.93
0.71
0.81
5
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 150 V
V
R
= 150 V
I
F
=
I
F
=
I
F
=
I
F
=
5A
10 A
5A
10 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 160°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
DSA10C150PB
preliminary
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-220
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
20
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
2
0.4
20
0.6
60
Product Marking
Part number
D
S
A
10
C
150
PB
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220AB (3)
Part Number
Logo
Assembly Line
Lot #
Date Code
XXXXXX
Zyyww
abcdef
Ordering
Standard
Part Number
DSA10C150PB
Marking on Product
DSA10C150PB
Delivery Mode
Tube
Quantity
50
Code No.
509188
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.54
16.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
DSA10C150PB
preliminary
Outlines TO-220
Dim.
A
A1
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
C
A2
ØP
Q
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
2.54
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.100
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
Q
E
ØP
4
1
2
3
3x b2
L1
3x b
2x e
L
D
1
H1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
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