FST7320SM thru FST7340SM
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100V V
RRM
D61-3SM Package
V
RRM
= 20 V - 100 V
I
F
= 70 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive p
p
peak reverse voltage
g
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FST7320SM FST7330SM FST7335SM FST7340SM
20
14
20
70
600
-40 to 175
-40 to 175
30
21
30
70
600
-40 to 175
-40 to 175
35
25
35
70
600
-40 to 175
-40 to 175
40
28
40
70
600
-40 to 175
-40 to 175
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 70 A, T
j
= 25 °C
V
R
= 20 V, T
j
= 25 °C
V
R
= 20 V, T
j
= 125 °C
FST7320SM FST7330SM FST7335SM FST7340SM
0.55
5
500
0.55
5
500
0.55
5
500
0.55
5
500
Unit
V
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.2
1.2
1.2
1.2
°C/W
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