BSO303SP H
OptiMOS
-P Power-Transistor
®
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-4.5 V
I
D
PG-DSO-8
-30
21
31
-9.1
V
mW
mW
A
Features
• single P-Channel in SO8
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for traget applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSO303SP H
Package
PG-DSO-8
Marking
303SP
Lead free
Yes
Halogen free
Yes
packing
dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
≤10 secs
Continuous drain current
1)
I
D
T
A
=25 °C
T
A
=70 °C
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 HBM
T
A
=25 °C
1)
2.50
T
A
=25 °C
2)
I
D
= -9.1 A,
R
GS
=25
W
-9.1
-7.1
-8.9
-7.1
-36
97
±20
1.56
mJ
V
W
°C
steady state
-7.2
-5.8
-7.2
-5.8
A
A
Unit
-55 ... 150
1B (500V - 1 kV)
260
55/150/56
°C
Rev. 1.1
page 1
2011-11-22
BSO303SP H
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJS
minimal footprint,
t
p
≤10 s
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
t
p
≤10 s
6 cm
2
cooling area
1)
,
steady state
-
-
35
K/W
R
thJA
-
-
110
-
-
150
-
-
50
-
-
80
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250mA
V
GS(th)
V
DS
=V
GS
,
I
D
=-100 µA
V
DS
=-30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20 V,
V
DS
=0 V
V
GS
=-4.5 V,
I
D
=-7.8 A
V
GS
=-10 V,
I
D
=-9.1 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-7.3 A
-30
-1
-
-1.5
-
-2
V
Zero gate voltage drain current
I
DSS
-
-0.1
-1
µA
-
-
-
-10
-
22
-100
-100
31
nA
mW
Drain-source on-state resistance
R
DS(on)
-
15
21
Transconductance
g
fs
12
19
-
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Rev. 1.1
page 2
2011-11-22
BSO303SP H
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=-9.1 A,
T
j
=25 °C
V
R
=15 V,
I
F
=-9.1 A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-0.88
-36.5
-1.2
V
-
-2.1
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=-15 V,
V
GS
=0 V
V
DD
=-24 V,
I
D
=9.1 A,
V
GS
=0 to -10 V
-
-
-
-
-
-
-
-4.8
-2.6
-14
-16
-40
-2.7
-14
-6.4
-3.5
-21
-24
-54
-
-19
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15 V,
V
GS
=-10 V,
I
D
=-1 A,
R
G
=6
W
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
-
-
-
-
-
-
-
1750
470
390
10
11
42
33
2330
625
580
15
17
63
50
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
t
rr
-
19
24
ns
Reverse recovery charge
2)
3)
Q
rr
-
9
11
nC
See figure 3
See figure 16 for gate charge parameter definition
Rev. 1.1
page 3
2011-11-22
BSO303SP H
1 Power dissipation
P
tot
=f(T
A
);
t
p
≤10 s
2 Drain current
I
D
=f(T
A
); |V
GS
|≥10 V;
t
p
≤10 s
3
10
2.5
8
2
6
P
tot
[W]
1.5
-I
D
[A]
4
2
0
0
40
80
120
160
0
40
80
120
160
1
0.5
0
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C
1)
;
D
=0
parameter:
t
p
10
2
100
4 Max. transient thermal impedance
Z
thJS
=f(t
p
)
parameter:
D
=t
p
/T
10
2
10 µs
1 µs
100 µs
0.2
100
0.5
10
1
10
10
1
limited by on-state
resistance
1 ms
10
0.1
0.05
Z
thJS
[K/W]
-I
D
[A]
0.02
10
0
1
10 ms
10
0
1
0.01
10
-1
0.1
DC
10
-1
0.1
single pulse
10
-2
0.01
0.1
1
10
100
10
-2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-V
DS
[V]
t
p
[s]
Rev. 1.1
page 4
2011-11-22
BSO303SP H
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
40
-10 V
-4.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
60
2.5 V
-2.7 V
-3 V
-3.2 V
-3.5 V
35
50
30
-3.5 V
40
R
DS(on)
[mW]
25
-I
D
[A]
20
-3.2 V
30
-4.5 V
15
-3 V
20
10
-2.7 V
-10 V
10
5
-2.5 V
-2.3 V
0
0
1
2
3
0
0
10
20
30
40
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
40
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
40
30
30
20
g
fs
[S]
150 °C
25 °C
-I
D
[A]
20
10
10
0
0
1
2
3
4
0
0
10
20
30
-V
GS
[V]
-I
D
[A]
Rev. 1.1
page 5
2011-11-22
京公网安备 11010802033920号
EEWORLD
