4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4708N
30
3.4 V
I
D
, DRAIN CURRENT (A)
25
20
15
10
2.6 V
5
2.4 V
0
0
1
2
3
4
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0
0
1
2
3
2.8 V
10 V
3.8 V to 4.5
V
GS
= 3 V
T
J
= 25°C
36
I
D
, DRAIN CURRENT (A)
30
24
18
T
J
= 125°C
12
6
T
J
= 25°C
4
5
T
J
= -55°C
42
V
DS
= 10 V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
0.02
V
GS
= 10 V
0.015
T = 125°C
0.01
T = 25°C
T = -55°C
0.005
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
0.018
Figure 2. Transfer Characteristics
T
J
= 25°C
0.014
V
GS
= 4.5 V
V
GS
= 10 V
0.006
0.01
0
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
0.002
4
8
12
16
20
24
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current
and Temperature
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
2
I
D
= 9 A
1.8 V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, TEMPERATURE (°C)
100
10000
100000
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
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3
NTMFS4708N
V
DS
= 0 V
C
ISS
C
ISS
C
RSS
C
OSS
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
2000
1800
C, CAPACITANCE (pF)
1600
1400
1200
1000
800
600
400
200
0
10
5
V
GS
0
V
DS
5
C
RSS
10
15
20
25
5
Q
T
4
Q
gs
Q
gd
3
2
1
I
D
= 11.5 A
T
J
= 25°C
0
2
4
6
8
10
0
Q
g
, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
100
V
DD
= 15 V
I
D
= 1 A
V
GS
= 4.5 V
t, TIME (ns)
t
d(on)
t
r
7
6
I
S
, SOURCE CURRENT (A)
5
4
3
2
1
0
0.2
V
GS
= 0 V
T
J
= 25°C
t
d(off)
10
t
f
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
0.8
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1000
V
GS
= 2.0 V
SINGLE PULSE
100 T
C
= 25°C
10
ms
10
100
ms
1 ms
1
10 ms
EAS, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
350
Figure 10. Diode Forward Voltage versus
Current
I
D
= 7 A
300
250
200
150
100
50
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (A)
0.1
RDS(on) LIMIT
Thermal Limit
Package Limit
0.1
1
10
dc
0.01
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTMFS4708N
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P (SO8 FL)
CASE 488AA-01
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
2X
0.20 C
D
2
D1
6
5
A
B
0.20 C
4X
E1
2
E
c
1
2
3
4
q
A1
TOP VIEW
3X
C
SEATING
PLANE
0.10 C
A
0.10 C
SIDE VIEW
8X
e
DETAIL A
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
---
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
---
4.22
6.15 BSC
5.50
5.80
6.10
3.45
---
4.30
1.27 BSC
0.51
0.61
0.71
0.51
---
---
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0
_
---
12
_
SOLDERING FOOTPRINT*
DETAIL A
3X
4X
b
e/2
1
4
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
1.270
0.750
4X
0.10
0.05
C A B
c
L
1.000
0.965
1.330
2X
K
E2
L1
6
5
0.905
4.530
0.475
2X
0.495
M
3.200
G
D2
BOTTOM VIEW
4.560
2X
1.530
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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