matched gallium nitride (GaN) on silicon carbide RF
power transistor optimized for civilian and military
pulsed avionics amplifier applications for the
960 MHz to 1215 MHz range such as Mode-S,
TCAS, JTIDS, DME and TACAN. Using state of the
art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation in extreme mismatched load
conditions unparalleled with older semiconductor
technologies.
MAGX-000912-650L0S
Ordering Information
Part Number
MAGX-000912-650L00
MAGX-000912-650L0S
MAGX-A00912-650L00
Description
Standard Flange
Earless Flange
960 - 1215 MHz
Evaluation Board
1. When ordering the evaluation board, please indicate on sales
order notes if it will be used for:
A. Standard Flange devices
B. Earless Flange devices
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000912-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 960-1215 MHz, 128
μs
Pulse, 10% Duty
Rev. V2
Typical RF Performance: (under standard operating conditions), P
OUT
= 650 W (Peak)
Freq
(MHz)
960
1030
1090
1150
1215
P
IN
(W)
6.5
5.2
5.8
5.7
6.0
Gain
(dB)
20
21
20.5
20.6
20.4
I
D
(A)
21
20.3
20.3
21
21.6
Eff.
(%)
62
64
64
62
60
RL
(dB)
-8
-13
-11
-15
-11
Droop
(dB)
0.3
0.2
0.3
0.3
0.2
+1dB OD
(W)
740
723
719
720
718
VSWR-S
(3:1)
S
S
S
S
S
VSWR-T
(3:1)
P
P
P
P
P
Electrical Specifications: Freq. = 960 - 1215 MHz, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: V
DD
= 50 V; I
DQ
= 500 mA; Pulse = 128 µs / 10%
Input Power
Power Gain
Drain Efficiency
Pulse Droop
Load Mismatch Stability
Load Mismatch Tolerance
P
OUT
= 650 W Peak (65 W avg.)
P
OUT
= 650 W Peak (65 W avg.)
P
OUT
= 650 W Peak (65 W avg.)
P
OUT
= 650 W Peak (65 W avg.)
P
OUT
= 650 W Peak (65 W avg.)
P
OUT
= 650 W Peak (65 W avg.)
P
IN
G
P
η
D
Droop
VSWR-S
VSWR-T
-
18.5
57
-
-
-
5.8
20.5
62
0.3
3:1
3:1
9.2
-
-
0.5
-
-
Wpk
dB
%
dB
-
-
Electrical Characteristics: T
A
= 25°C
Parameter
Test Conditions
Symbol
Typ.
Units
DC Characteristics
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 90 mA
V
DS
= 5 V, I
D
= 21 mA
I
DS
V
GS (TH)
G
M
1.7
-3.1
22
mA
V
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not applicable - Input matched
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
N/A
55
5.5
pF
pF
pF
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000912-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 960-1215 MHz, 128
μs
Pulse, 10% Duty
Absolute Maximum Ratings
2,3,4,5
Parameter
Supply Voltage (V
DD
)
Supply Voltage (V
GS
)
Supply Current (I
D
)
Input Power (P
IN
)
Junction/Channel Temp
Pulsed Power Dissipation at +85°C
Thermal Resistance, (T
J
= +70°C)
V
DD
= 50 V, I
DQ
= 500 mA,
P
OUT
= 650 W, 128 µs Pulse / 10% Duty
Operating Temperature
Storage Temperature
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
2.
3.
4.
5.
Rev. V2
Rating
+65 V
-8 to -2 V
33 A
P
IN
(nominal) +3 dB
200°C
1 kW
0.17°C/W
-40 to +95°C
-65 to +150°C
See solder reflow profile
1300 V
4000 V
Operation of this device above any one of these parameters may cause permanent damage.
Input Power Limit is +3 dB over nominal drive required to achieve P
OUT
= 650 W.
Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
For saturated performance it recommended that the sum of (3*V
DD
+ abs(V
GG
)) <175 V.
Test Fixture Impedances
F (MHz)
960
1030
1060
1150
1215
Z
IF
(Ω)
0.7 - j0.9
0.7 - j0.5
0.8 - j0.1
0.9 + j0.1
1.1 + j0.4
Z
OF
(Ω)
1.4 + j0.7
1.7 + j0.6
1.7 + j0.5
1.6 + j0.3
1.2 + j0.4
Correct Device Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000912-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 960-1215 MHz, 128
μs
Pulse, 10% Duty
Test Fixture Circuit Dimensions
Rev. V2
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000912-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 960-1215 MHz, 128
μs
Pulse, 10% Duty
RF Power Transfer Curve (Output Power vs. Input Power)
850
750
Rev. V2
Output Power (W)
650
550
450
350
250
150
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
960 MHz
1090 MHz
1215 MHz
Input Power (W)
RF Power Transfer Curve (Drain Efficiency vs. Output Power)
70
60
Drain Efficiency (%)
50
40
960 MHz
1090 MHz
30
1215 MHz
20
150
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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