BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
●
●
●
●
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD645
Collector-base voltage (I
E
= 0)
BD647
BD649
BD651
BD645
Collector-emitter voltage (I
B
= 0)
BD647
BD649
BD651
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
80
100
120
140
60
80
100
120
5
8
12
0.3
62.5
2
50
-65 to +150
-65 to +150
260
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD645
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 5)
BD647
BD649
BD651
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 70 V
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
V
EB
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
5V
3V
12 mA
50 mA
50 mA
3V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
3A
3A
5A
5A
3A
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
2
2.5
3
2.5
V
V
V
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
MIN
60
80
100
120
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.0
62.5
UNIT
°C/W
°C/W
2
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
50000
TCS130AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
TCS130AB
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
1·5
1000
1·0
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
10
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0·5
0·5
1·0
I
C
- Collector Current - A
10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS130AC
2·5
2·0
1·5
1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
0·5
0·5
1·0
I
C
- Collector Current - A
10
Figure 3.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAS130AC
I
C
- Collector Current - A
1·0
0·1
0.01
1·0
BD645
BD647
BD649
BD651
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS130AC
Figure 5.
4
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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