IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
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Email
- For salesaddresses@nxp.com use
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For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
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Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BYT79 series
Rectifier diodes
ultrafast
Product
specification
September 1998
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYT79 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
k
1
a
2
V
F
≤
1.05 V
I
F(AV)
= 14 A
t
rr
≤
60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYT79 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
I
FSM
PARAMETER
Peak repetitive reverse voltage
Continuous reverse voltage
Average forward current
1
Non-repetitive peak forward
current.
Storage temperature
Operating junction temperature
CONDITIONS
BYT79
T
mb
≤
147˚C
square wave;
δ
= 0.5;
T
mb
≤
117 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-40
-
MIN.
-300
300
300
MAX.
-400
400
400
14
130
143
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air.
-
TYP.
-
60
MAX.
2.0
-
UNIT
K/W
K/W
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
BYT79 series
TYP.
0.90
1.17
5.0
0.2
50
50
4.0
2.5
MAX.
1.05
1.38
50
0.8
60
60
5.2
-
UNIT
V
V
µA
mA
nC
ns
A
V
I
dI
F
dt
F
25
PF / W
Vo = 0.9075 V
Rs = 0.0095 Ohms
BYT79
Tmb(max) / C
100
D = 1.0
110
20
t
rr
time
15
0.2
10
0.1
0.5
120
130
I
t
p
t
p
D=
T
Q
I
R
I
s
10%
100%
5
140
T
t
rrm
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.9075 V
Rs = 0.0095 Ohms
I
F
20
BYT79
Tmb(max) / C
110
a = 1.57
15
2.2
1.9
2.8
120
time
VF
V
VF
time
10
4
130
5
140
fr
0
0
5
10
150
15
IF(AV) / A
Fig.2. Definition of V
fr
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
September 1998
2
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100
1A
100
2A
10
Tj = 25 C
Tj = 100 C
1
1
10
dIF/dt (A/us)
100
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C
Fig.8. Maximum Q
s
at T
j
= 25˚C
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
10us
T
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV79E
10s
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
50
IF / A
Tj = 25 C
Tj = 150 C
BYT79
40
30
typ
20
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
September 1998
3
Rev 1.300
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