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DN2530N3-G-P005

Description
MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92
Categorysemiconductor    Discrete semiconductor   
File Size501KB,6 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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DN2530N3-G-P005 Overview

MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92

DN2530N3-G-P005 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerMicrochip
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current175 mA
Rds On - Drain-Source Resistance12 Ohms
ConfigurationSingle
PackagingCut Tape
PackagingReel
Factory Pack Quantity2000
Transistor Type1 N-Channel
Unit Weight0.016000 oz
DN2530
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
The DN2530 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Device
DN2530
Package Options
TO-243AA (SOT-89)
DN2530N8-G
TO-92
DN2530N3-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
300
12
200
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
SOURCE
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
O
DRAIN
Value
BV
DSX
BV
DGX
±20V
-55 C to +150 C
O
TO-92 (N3)
GATE
GATE
TO-243AA (SOT-89) (N8)
Product Marking
DN
2 5 3 0
YYWW
300
O
C
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
DN5TW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

DN2530N3-G-P005 Related Products

DN2530N3-G-P005 DN2530N3-P002
Description MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 MOSFET 300V 12Ohm
Product Category MOSFET MOSFET
Manufacturer Microchip Microchip
RoHS Details No
Technology Si Si
Mounting Style Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Number of Channels 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 300 V 300 V
Id - Continuous Drain Current 175 mA 175 mA
Rds On - Drain-Source Resistance 12 Ohms 12 Ohms
Configuration Single Single
Factory Pack Quantity 2000 2000
Transistor Type 1 N-Channel 1 N-Channel
Unit Weight 0.016000 oz 0.007760 oz
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