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TZMB3V3-GS08

Description
EEPROM 2 Mbit serial I2C 1.8V to 5.5V EEPROM
Categorysemiconductor    Discrete semiconductor   
File Size65KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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TZMB3V3-GS08 Overview

EEPROM 2 Mbit serial I2C 1.8V to 5.5V EEPROM

TZMB3V3-GS08 Parametric

Parameter NameAttribute value
Product CategoryZener Diodes
ManufacturerVishay
RoHSDetails
Vz - Zener Voltage3.3 V
Mounting StyleSMD/SMT
Package / CaseSOD-80
Pd - Power Dissipation500 mW (1/2 W)
Voltage Tolerance2 %
Voltage Temperature Coefficient- 0.05 %/K
Zener Current2 uA
Zz - Zener Impedance90 Ohms
Minimum Operating Temperature-
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Test Current5 mA
PackagingCut Tape
PackagingMouseReel
PackagingReel
Diameter1.6 mm
Length3.7 mm
ProductSmall Signal Zener Diodes
Factory Pack Quantity2500
Termination StyleSMD/SMT
TypeVoltage Regulator
Vf - Forward Voltage1.5 V
Unit Weight0.001827 oz
TZMC1V0
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very high stability
• Low noise
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
1.0
5
Pulse current
Single
UNIT
V
mA
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
TZMC1V0
TZMC1V0
ORDERING CODE
TZMC1V0-GS18
TZMC1V0-GS08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
2500 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000/box
12 500/box
PACKAGE
PACKAGE NAME
MiniMELF SOD-80
WEIGHT
31 mg
MOLDING COMPOUND
FLAMMABILITY RATING
-
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction temperature
Storage temperature range
Thermal resistance junction to ambient air
On PC board 50 mm x 50 mm x 1.6 mm
TEST CONDITION
R
thJA
300 K/W
SYMBOL
P
tot
I
Z
T
J
T
stg
R
thJA
VALUE
500
P
tot
/V
Z
175
-65 to +175
500
UNIT
mW
mA
°C
°C
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
TZMC1V0
(1)
0.7
MAX.
0.8
5
1
TEST CURRENT
I
ZT1
mA
TYP.
<8
I
ZT2
DYNAMIC RESISTANCE
Z
Z
at I
ZT1
Ω
TYP.
< 50
MIN.
-0.26
Z
ZK
at I
ZT2
TEMPERATURE
COEFFICIENT OF ZENER
VOLTAGE
TK
VZ
%/K
MAX.
-0.23
Note
(1)
The TZMC1V0 is a silicon diode operated in forward direction. Hence the index of all parameters should be “F” instead of “Z”. Connect the
cathode electrode to negative pole.
Rev. 1.5, 11-Jul-17
Document Number: 84123
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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