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BSZ440N10NS3-G

Description
MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
Categorysemiconductor    Discrete semiconductor   
File Size2MB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSZ440N10NS3-G Overview

MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3

BSZ440N10NS3-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance38 mOhms
Vgs th - Gate-Source Threshold Voltage2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge9.1 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time2 ns
Forward Transconductance - Min8 S
Height1.1 mm
Length3.3 mm
Pd - Power Dissipation29 W
Rise Time1.8 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9.1 ns
Typical Turn-On Delay Time4.3 ns
Width3.3 mm
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS™3Power-Transistor,100V
BSZ440N10NS3G
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
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