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KSP10
KSP10
VHF/UHF transistor
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
P
C
P
C
T
J
T
STG
Rth(j-c)
Rth(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation (T
a
=25°C)
Derate above 25°C
Collector Power Dissipation (T
C
=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Value
30
25
3.0
350
2.8
1.0
8.0
150
-55~150
125
357
Units
V
V
V
mW
mW/°C
W
W/°C
°C
°C
°C/W
°C/W
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
C
rb
C
c·rbb´
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector Base Feedback Capacitance
Collector Base Time Constant
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=10V, I
C
=4mA
I
C
=4mA, I
B
=0.4mA
V
CE
=10V, I
C
=4mA
V
CE
=10V, I
C
=4mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=4mA,
f=31.8MHz
0.35
650
0.7
0.65
9.0
60
0.5
0.95
V
V
MHz
pF
pF
ps
Min.
30
25
3.0
100
100
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP10
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10000
V
CE
= 10V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1000
V
BE
(sat)
10
100
V
CE
(sat)
1
1
10
100
1000
10
0.1
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10000
140
V
CE
= 10V
f=100MHz
120
], INPUT ADMITTANCE
1000
100
80
g
ib
60
100
-b
ib
40
y
ib
[
20
100
Ω
10
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
f[MHz], FREQUENCY
Figure 3. Current Gain Bandwidth Product
Figure 4. Rectangular Form
], FORWARD TRANSFER ADMITTANCE
0
100
90
80
70
], OUTPUT ADMITTANCE
-10
b
fb
60
50
40
30
20
10
0
-10
-20
-30
100
1000
-20
1000MHz
-30
-g
fb
700
-40
y
ob
[
-60
0
10
20
30
40
50
60
70
80
90
g
ib
[
]
y
fb
[
Figure 5. Polar Form
©2002 Fairchild Semiconductor Corporation
Ω
Ω
400
-50
200
100
Ω
f[MHz], FREQUENCY
Figure 6. Rectangular Form
Rev. A2, September 2002
Analog electronics
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