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CY62256VNLL-70SNXIT

Description
ESD Suppressors / TVS Diodes SOT-23 7V 600W Low Capacitance
Categorystorage   
File Size317KB,17 Pages
ManufacturerCypress Semiconductor
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CY62256VNLL-70SNXIT Overview

ESD Suppressors / TVS Diodes SOT-23 7V 600W Low Capacitance

CY62256VNLL-70SNXIT Parametric

Parameter NameAttribute value
Product CategorySRAM
ManufacturerCypress Semiconductor
RoHSDetails
Memory Size256 kbit
Organization32 k x 8
Access Time70 ns
Interface TypeParallel
Supply Voltage - Max3.6 V
Supply Voltage - Min2.7 V
Supply Current - Max30 mA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 85 C
Mounting StyleSMD/SMT
Package / CaseSOIC-28
PackagingCut Tape
PackagingMouseReel
PackagingReel
Data RateSDR
Memory TypeSDR
Moisture SensitiveYes
Number of Ports1
Operating Temperature Range- 40 C to + 85 C
Factory Pack Quantity1000
TypeAsynchronous
Unit Weight0.078125 oz
CY62256VN
256-Kbit (32 K × 8) Static RAM
256-Kbit (32 K × 8) Static RAM
Features
Functional Description
The CY62256VN family is composed of two high performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and tristate drivers.
These devices have an automatic power-down feature, reducing
the power consumption by over 99% when deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location addressed
by the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device and
enabling the outputs, CE and OE active LOW, while WE remains
inactive or HIGH. Under these conditions, the contents of the
location addressed by the information on address pins are
present on the eight data input/output pins.
The input/output pins remain in a high impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH.
For a complete list of related documentation, click
here.
Temperature ranges
Commercial: 0 °C to +70 °C
Industrial: –40 °C to +85 °C
Automotive-A: –40 °C to +85 °C
Automotive-E: –40 °C to +125 °C
Speed: 70 ns
Low voltage range: 2.7 V to 3.6 V
Low active power and standby power
Easy memory expansion with CE and OE features
TTL compatible inputs and outputs
Automatic power-down when deselected
CMOS for optimum speed and power
Available in standard Pb-free and non Pb-free 28-pin (300-mil)
narrow SOIC, 28-pin TSOP-I, and 28-pin reverse TSOP-I
packages
Logic Block Diagram
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
CE
WE
OE
A
14
A
13
A
12
A
11
A
1
A
0
ROW DECODER
I/O
0
I/O
1
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
32K x 8
Y
ARRA
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Cypress Semiconductor Corporation
Document Number: 001-06512 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 16, 2015

CY62256VNLL-70SNXIT Related Products

CY62256VNLL-70SNXIT
Description ESD Suppressors / TVS Diodes SOT-23 7V 600W Low Capacitance
Product Category SRAM
Manufacturer Cypress Semiconductor
RoHS Details
Memory Size 256 kbit
Organization 32 k x 8
Access Time 70 ns
Interface Type Parallel
Supply Voltage - Max 3.6 V
Supply Voltage - Min 2.7 V
Supply Current - Max 30 mA
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Mounting Style SMD/SMT
Package / Case SOIC-28
Packaging Reel
Data Rate SDR
Memory Type SDR
Moisture Sensitive Yes
Number of Ports 1
Operating Temperature Range - 40 C to + 85 C
Factory Pack Quantity 1000
Type Asynchronous
Unit Weight 0.078125 oz
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