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FD1200R17KE3-K

Description
Thermal Interface Products Soft PGS - IGBT Mod Infineon
CategoryDiscrete semiconductor    The transistor   
File Size479KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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FD1200R17KE3-K Overview

Thermal Interface Products Soft PGS - IGBT Mod Infineon

FD1200R17KE3-K Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1600 A
Collector-emitter maximum voltage1700 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components1
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)5950 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)2100 ns
Nominal on time (ton)1050 ns
VCEsat-Max2.45 V
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FD1200R17KE3-K
VorläufigeDaten
PreliminaryData
V
CES

1700
1200
1600
2400
5,95
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,2







typ.
2,00
2,40
5,8
14,0
1,6
110
3,50


0,74
0,80
0,20
0,25
1,45
1,80
0,18
0,30
240
350
305
445
max.
2,45
6,4




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
IGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

I
C nom

I
C
I
CRM
P
tot
V
GES




A

kW

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 1200 A, V
GE
= 15 V
I
C
= 1200 A, V
GE
= 15 V
I
C
= 48,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1700 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 1,2
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 1,2
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 1,5
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 1,5
I
C
= 1200 A, V
CE
= 900 V, L
S
= 50 nH
V
GE
= ±15 V
R
Gon
= 1,2
I
C
= 1200 A, V
CE
= 900 V, L
S
= 50 nH
V
GE
= ±15 V
R
Goff
= 1,5
V
GE
15 V, V
CC
= 1000 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on


E
off
I
SC
R
thJC
R
thCH
T
vj op




-40


t
P
10 µs, T
vj
= 125°C
4800

17,0

A
21,0 K/kW
K/kW
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:RH
approvedby:TS
dateofpublication:2013-10-03
revision:2.1
1

FD1200R17KE3-K Related Products

FD1200R17KE3-K FD1200R17KE3KNOSA1
Description Thermal Interface Products Soft PGS - IGBT Mod Infineon MODULE IGBT IHM130-2
Is it Rohs certified? incompatible incompatible
package instruction FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code compliant not_compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 1600 A 1600 A
Collector-emitter maximum voltage 1700 V 1700 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X7 R-XUFM-X7
Number of components 1 1
Number of terminals 7 7
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 2100 ns 2100 ns
Nominal on time (ton) 1050 ns 1050 ns
Base Number Matches 1 1
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