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DN2540N3-G-P014

Description
MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92
Categorysemiconductor    Discrete semiconductor   
File Size818KB,8 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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DN2540N3-G-P014 Overview

MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92

DN2540N3-G-P014 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerMicrochip
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage400 V
Id - Continuous Drain Current120 mA
Rds On - Drain-Source Resistance25 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeDepletion
PackagingReel
Fall Time20 ns
Height5.33 mm
Length5.21 mm
Pd - Power Dissipation1 W
ProductMOSFET Small Signal
Rise Time15 ns
Factory Pack Quantity2000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time10 ns
Width4.19 mm
Unit Weight0.016000 oz
Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN2540
General Description
Applications
Converters
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Normally-on switches
Solid state relays
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Part Number
DN2540N3-G
DN2540N3-G P002
Product Summary
Packing
1000/Bag
BV
DSX
/BV
DGX
400V
Package Option
TO-92
R
DS(ON)
(max)
I
DSS
(min)
25Ω
150mA
DN2540N3-G P003
DN2540N3-G P005
DN2540N3-G P013
DN2540N3-G P014
DN2540N5-G
DN2540N8-G
TO-220
TO-243AA (SOT-89)
TO-92
2000/Reel
Pin Configuration
DRAIN
50/Tube
2000/Reel
DRAIN
SOURCE
GATE
GATE
DRAIN
SOURCE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
TO-92
DRAIN
TO-220
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Typical Thermal Resistance
Package
TO-92
TO-220
TO-243AA (SOT-89)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
θ
ja
132
O
C/W
29
O
C/W
133
O
C/W
Doc.# DSFP-DN2540
B060313
Supertex inc.
www.supertex.com

DN2540N3-G-P014 Related Products

DN2540N3-G-P014 DN2540N8 DN2540N3-P003 DN2540N3 DN2540N3-P014
Description MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92 MOSFET 400V 25Ohm MOSFET 400V 25Ohm MOSFET 400V 25Ohm
Product Category MOSFET MOSFET MOSFET MOSFET MOSFET
Manufacturer Microchip Microchip Microchip Microchip Microchip
RoHS Details No No No No
Technology Si Si Si Si Si
Mounting Style Through Hole SMD/SMT Through Hole Through Hole Through Hole
Package / Case TO-92-3 SOT-89-3 TO-92-3 TO-92-3 TO-92-3
Number of Channels 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 400 V 400 V 400 V 400 V 400 V
Id - Continuous Drain Current 120 mA 170 mA 120 mA 120 mA 120 mA
Rds On - Drain-Source Resistance 25 Ohms 25 Ohms 25 Ohms 25 Ohms 25 Ohms
Vgs - Gate-Source Voltage 20 V 20 V 20 V 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C - 55 C - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C + 150 C
Configuration Single Single Single Single Single
Channel Mode Depletion Depletion Depletion Depletion Depletion
Fall Time 20 ns 15 ns 20 ns 20 ns 20 ns
Height 5.33 mm 1.6 mm 5.33 mm 5.33 mm 5.33 mm
Length 5.21 mm 4.6 mm 5.21 mm 5.21 mm 5.21 mm
Pd - Power Dissipation 1 W 1.6 W 1 W 1 W 1 W
Rise Time 15 ns 15 ns 15 ns 15 ns 15 ns
Factory Pack Quantity 2000 2000 2000 1000 2000
Transistor Type 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel
Typical Turn-Off Delay Time 15 ns 15 ns 15 ns 15 ns 15 ns
Typical Turn-On Delay Time 10 ns 10 ns 10 ns 10 ns 10 ns
Width 4.19 mm 2.6 mm 4.19 mm 4.19 mm 4.19 mm
Unit Weight 0.016000 oz 0.001862 oz 0.007760 oz 0.016000 oz 0.007760 oz
Product MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal - MOSFET Small Signal
Type - FET FET FET FET
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