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KSH210
KSH210
D-PAK for Surface Mount Applications
•
•
•
•
High DC Current Gain
Low Collector Emitter Saturation Voltage
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Peck Current (Pulse)
Base Current
Collector Dissipation (T
C
= 25°C)
Collector Dissipation (T
a
= 25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 40
- 25
-8
-5
- 10
-1
12.5
1.4
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CBO
I
EBO
h
FE
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= - 10mA, I
B
= 0
V
CB
= - 40V, I
E
= 0
V
EBO
= - 8V, I
C
= 0
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 2A, I
B
= - 200mA
I
C
= - 5A, I
B
= - 1A
I
C
= - 5A, I
B
= - 1A
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
65
120
70
45
10
Min.
-25
Max.
-100
-100
180
-0.3
-0.75
-1.8
-2.5
-1.6
V
V
V
V
V
MHz
pF
Units
V
nA
nA
V
CE
(sat)
* Collector-Emitter Saturation Voltage
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH210
Typical Characteristics
1000
-10
V
CE
(sat),V
BE
(sat)[V], SATURATION VOLTAGE
I
C
=10I
B
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
V
CE
=-2V
V
CE
=-1V
10
-0.1
V
CE
(sat)
1
-0.01
-0.1
-1
-10
-0.01
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
V
CC
=-30V
I
C
=10I
B
100
t
R
,t
D
[ns], TURN ON TIME
C
ob
[pF], CAPACITANCE
1
t
R
0.1
10
t
D
1
-0.1
-1
-10
-100
0.01
-0.01
-0.1
-1
-10
V
CB
[V], COLLECTOR BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
1000
-100
I
C
[A], COLLECTOR CURRENT
V
CC
=-30V
I
C
=10I
B
I
B1
=-I
B2
t
STG
,t
F
[ns], TURN OFF TIME
-10
t
STG
5m
s
50
0
1m
µ
s
s
s
0
µ
10
DC
-1
100
t
F
-0.1
10
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
NXP MCU
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