DISCRETE SEMICONDUCTORS
DATA SHEET
BB156
Low-voltage variable capacitance
diode
Product specification
Supersedes data of 1998 Aug 17
2004 Mar 01
NXP Semiconductors
Product specification
Low-voltage variable capacitance diode
FEATURES
Excellent linearity
Very small plastic SMD package
C7.5: 4.8 pF; ratio 3.3
Very low series resistance.
APPLICATIONS
Voltage controlled oscillators (VCO).
DESCRIPTION
The BB156 is a planar technology variable capacitance
diode, in a SOD323 very small plastic SMD package.
Marking code: PF.
The marking bar indicates the cathode.
Fig.1
PINNING
PIN
1
2
cathode
anode
BB156
DESCRIPTION
1
2
sym008
Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BB156
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
PARAMETER
MIN.
55
55
MAX.
10
20
+150
+125
UNIT
V
mA
C
C
2004 Mar 01
2
NXP Semiconductors
Product specification
Low-voltage variable capacitance diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
R
r
s
C
d
PARAMETER
reverse current
diode series resistance
diode capacitance
CONDITIONS
V
R
= 10 V; see Fig.3
V
R
= 10 V; T
j
= 85
C;
see Fig.3
f = 470 MHz; C
d
= 9 pF
f = 1 MHz; see Figs 2 and 4
V
R
= 1 V
V
R
= 4 V
V
R
= 7.5 V
C
d
1 V
----------------------
C
d
7.5 V
capacitance ratio
f = 1 MHz
14.4
7.6
4.2
2.7
16
8.6
4.8
3.3
MIN.
TYP.
0.4
BB156
MAX.
10
200
0.7
17.6
9.6
5.4
3.9
UNIT
nA
nA
pF
pF
pF
2004 Mar 01
3
NXP Semiconductors
Product specification
Low-voltage variable capacitance diode
GRAPHICAL DATA
BB156
MGR466
handbook, full pagewidth
20
Cd
(pF)
16
12
8
4
0
10
−1
f = 1 MHz; T
j
= 25
C.
1
10
VR (V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10
3
I
R
(nA)
10
2
mlc816
10
3
handbook, halfpage
MBH583
TC d
(K
−1
)
10
4
10
1
0
20
40
60
80
T
j
(°C)
100
10
5
10
1
1
10
VR (V)
10
2
T
j
= 0
C
to 85
C.
Fig.4
Fig.3
Reverse current as a function of junction
temperature; maximum values.
Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
2004 Mar 01
4
NXP Semiconductors
Product specification
Low-voltage variable capacitance diode
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
BB156
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
2004 Mar 01
5
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