B0530WS
Taiwan Semiconductor
200mW, 0.47V Schottky Barrier Diode
FEATURES
●
●
●
●
Designed for mounting on small surface
Low Capacitance
Low forward voltage drop
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
=500mA
T
J
Max.
Package
Configuration
VALUE
500
30
5
0.47
125
UNIT
mA
V
A
V
°C
APPLICATIONS
●
●
●
●
Adapters
For switching power supply
Low stored charge
Inverter
SOD-323F
Single dice
MECHANICAL DATA
●
●
●
●
●
●
●
●
Case: SOD-323F
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 4.85 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Forward current
Non-repetitive peak forward surge current @ t = 8.3ms
Junction temperature range
Storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
B0530WS
RF
30
200
5
-65 to +125
-65 to +125
V
mA
A
°C
°C
UNIT
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
426
UNIT
°C/W
1
Version:J1706
B0530WS
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 100mA, T
J
= 25°C
I
F
= 500mA, T
J
= 25°C
V
R
=15V T
J
= 25°C
V
R
=20V T
J
= 25°C
V
R
=30V T
J
= 25°C
1 MHz, V
R
=0V
SYMBOL
V
F
TYP
-
-
-
-
MAX
0.36
0.47
80
100
500
160
UNIT
V
Reverse current @ rated V
R
per
diode
(2)
I
R
C
J
μA
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
-
pF
ORDERING INFORMATION
PART NO.
B0530WS
(Note 1)
PACKING
CODE
RR
G
R9
SOD-323F
10K / 13" Reel
PACKING CODE
SUFFIX
PACKAGE
PACKING
3K / 7" Reel
Notes:
1. Whole series with green compound
EXAMPLE
EXAMPLE P/N
B0530WS RRG
PART NO.
B0530WS
PACKING CODE
RR
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:J1706
B0530WS
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
10
Instantaneous Forward Current (A)
1
Fig. 2 Forward Current Derating Curve
Io: Mean Forward Current (A)
0.75
1
0.5
0.1
0.25
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0
25
50
75
100
125
150
Instantaneous Forward Voltage (V)
Terminal Temperature (°C)
Fig. 3 Admissible Power Dissipation Curve
250
70
60
Junction Capacitance (pF)
50
40
30
20
10
0
0
25
50
75
100
o
Fig. 4 Typical Junction Capacitance
200
Power Dissipation (mW)
150
100
50
0
125
150
0
5
10
15
20
25
Ambient Temperature ( C)
Reverse Voltage (V)
3
Version:J1706
DIY/Open Source Hardware
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