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STGFW20V60F

Description
IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
CategoryDiscrete semiconductor    The transistor   
File Size2MB,19 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STGFW20V60F Overview

IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

STGFW20V60F Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
Is it Rohs certified?conform to
Parts packaging codeTO-3PF
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time32 weeks
Shell connectionISOLATED
Maximum collector current (IC)40 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)173 ns
Nominal on time (ton)49 ns
Base Number Matches1
STGFW20V60F,
STGW20V60F, STGWT20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet
-
production data
Features
Maximum junction temperature: T
J
= 175 °C
1
3
2
1
Very high speed switching series
Tail-less switching off
Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
3
2
1
TO-3PF
TAB
3
2
1
Lead free package
TO-247
TO-3P
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
E (3)
Table 1. Device summary
Order code
STGFW20V60F
STGW20V60F
STGWT20V60F
Marking
GFW20V60F
GW20V60F
GWT20V60F
Package
TO-3PF
TO-247
TO-3P
Packaging
Tube
Tube
Tube
July 2013
This is information on a product in full production.
DocID024851 Rev 1
1/19
www.st.com
19

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STGFW20V60F STGWT20V60F
Description IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
Configuration SINGLE WITH BUILT-IN DIODE Single
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