MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW45/D
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
MPSW45
MPSW45A*
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSW45
40
50
12
1.0
1.0
8.0
2.5
20
– 55 to +150
MPSW45A
50
60
12
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100
µAdc,
VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
MPSW45
MPSW45A
IEBO
V(BR)CES
MPSW45
MPSW45A
V(BR)CBO
MPSW45
MPSW45A
V(BR)EBO
ICBO
—
—
—
100
100
100
nAdc
50
60
12
—
—
—
Vdc
nAdc
40
50
—
—
Vdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MPSW45 MPSW45A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base– Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
25,000
15,000
4,000
VCE(sat)
VBE(sat)
VBE(on)
—
—
—
150,000
—
—
1.5
2.0
2.0
Vdc
Vdc
Vdc
—
SMALL– SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
fT
Ccb
100
—
—
6.0
MHz
pF
v
300
m
s; Duty Cycle
v
2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSW45 MPSW45A
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
200
en, NOISE VOLTAGE (nV)
100
10
µA
50
100
µA
20
IC = 1.0 mA
10
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
BANDWIDTH = 1.0 Hz
RS
≈
0
i n, NOISE CURRENT (pA)
2.0
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
100
µA
10
µA
IC = 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
NF, NOISE FIGURE (dB)
100
70
50
30
20
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10
µA
10
10
µA
8.0
6.0
4.0
2.0
0
1.0
IC = 1.0 mA
100
µA
100
µA
1.0 mA
10
1.0
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MPSW45 MPSW45A
SMALL–SIGNAL CHARACTERISTICS
20
TJ = 25°C
C, CAPACITANCE (pF)
10
7.0
5.0
Cibo
Cobo
|h fe |, SMALL–SIGNAL CURRENT GAIN
4.0
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
2.0
1.0
0.8
0.6
0.4
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
40
0.2
0.5
1.0
2.0
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200 k
TJ = 125°C
hFE, DC CURRENT GAIN
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.5
IC = 10 mA
2.0
50 mA
250 mA
500 mA
25°C
1.5
– 55°C
VCE = 5.0 V
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (µA)
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
R
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.6
TJ = 25°C
1.4
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
– 1.0
*APPLIES FOR IC/IB
≤
hFE/3.0
*R
q
VC FOR VCE(sat)
25°C TO 125°C
– 2.0
– 55°C TO 25°C
– 3.0
25°C TO 125°C
– 4.0
q
VB FOR VBE
– 5.0
– 55°C TO 25°C
0.8
VCE(sat) @ IC/IB = 1000
0.6
5.0 7.0
10
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
– 6.0
5.0 7.0 10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSW45 MPSW45A
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
D = 0.5
0.2
SINGLE PULSE
Z
θJC(t)
= r(t)
•
R
θJC
TJ(pk) – TC = P(pk) Z
θJC(t)
Z
θJA(t)
= r(t)
•
R
θJA
TJ(pk) – TA = P(pk) Z
θJA(t)
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
300
200
100
70
50
30
20
10
0.4 0.6
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TA = 25°C
TC = 25°C
1.0 ms
100
µs
FIGURE A
tP
1.0 s
PP
PP
t1
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
1
+
t1 f
+
ttP
PEAK PULSE POWER = PP
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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