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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC857BS
PNP general purpose double
transistor
Product data sheet
Supersedes data of 1997 Jul 09
1999 Apr 26
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
FEATURES
•
Low collector capacitance
•
Low collector-emitter saturation voltage
•
Closely matched current gain
•
Reduces number of components and boardspace
•
No mutual interference between the transistors.
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
TR1
handbook, halfpage
BC857BS
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
6
5
4
5
4
6
TR2
PNP double transistor in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
MARKING
TYPE NUMBER
BC857BS
MARKING CODE
3Ft
Fig.1
1
Top view
2
3
1
MAM339
2
3
Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
Tamb
≤
25
°C;
note 1
−
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
−50
−45
−5
−100
−200
−200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 Apr 26
2
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
THERMAL CHARACTERISTICS
SYMBOL
Per device
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
= 2 mA; V
CE
=
−5
V
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV; f = 1 MHz
−
−
−
200
−
−
−
−600
−
−
−
−
−
−
−
−
−755
−655
−
10
−
PARAMETER
CONDITIONS
MIN.
thermal resistance from junction to ambient
note 1
416
PARAMETER
CONDITIONS
VALUE
BC857BS
UNIT
K/W
TYP.
MAX.
−15
−5
−100
450
−100
−400
−
−750
2.2
−
−
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 100
1999 Apr 26
3
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BS
handbook, full pagewidth
400
MBH727
hFE
VCE =
−5
V
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
Fig.2 DC current gain; typical values
1999 Apr 26
4
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