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IRF6623

Description
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
CategoryDiscrete semiconductor    The transistor   
File Size218KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF6623 Overview

MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC

IRF6623 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionISOMETRIC-3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)43 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.0057 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
JESD-609 codee4
Humidity sensitivity level3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceSilver/Nickel (Ag/Ni)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95824C
IRF6623
l
l
l
l
l
l
l
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with Existing Surface Mount Techniques
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
5.7mΩ@V
GS
= 10V
9.7mΩ@V
GS
= 4.5V
Qg(typ.)
11nC
ST
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET™ ISOMETRIC
Description
The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6623 has been optimized for parameters that are
critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the
control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Max.
20
±20
55
16
13
120
42
1.4
Units
V
i
Power Dissipation
f
Power Dissipation
f
™
i
@ 10V
Ãf
@ 10V
f
A
W
mJ
A
W/°C
°C
Single Pulse Avalanche Energy
Avalanche Current
Ù
d
2.1
43
40
0.017
-40 to + 150
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
Notes

through
ˆ
are on page 2
www.irf.com
1
12/21/05
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