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STPS20SM60CG-TR

Description
Schottky Diodes u0026 Rectifiers 60V PWR Schottky REC 0.370 V 2 x 10 A
CategoryDiscrete semiconductor    diode   
File Size111KB,11 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STPS20SM60CG-TR Overview

Schottky Diodes u0026 Rectifiers 60V PWR Schottky REC 0.370 V 2 x 10 A

STPS20SM60CG-TR Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionD2PAK-3/2
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.645 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current220 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage60 V
Maximum reverse current40 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationSINGLE
STPS20SM60C
Power Schottky rectifier
Features
A1
K
A2
High current capability
Avalanche rated
Low forward voltage drop
High frequency operation
K
K
A2
A2
A1
K
Description
The STPS20SM60C is a dual diode Schottky
rectifier, suited for high frequency switch mode
power supply.
Packaged in TO-220AB, TO-220FPAB, I
2
PAK and
D
2
PAK, this device is intended to be used in
notebook, game station and desktop adapters,
providing in these aplications a good efficiency at
both low and high load.
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
V
F
(typ)
T
j
(max)
Value
2 x 10 A
60 V
0.420 V
150 °C
K
A1
D
2
PAK
STPS20SM60CG-TR
I
2
PAK
STPS20SM60CR
A2
A1
K
A1
K
A2
TO-220AB
STPS20SM60CT
TO-220FPAB
STPS20SM60CFP
Figure 1.
V
I
Electrical characteristics
(a)
I
"Forward"
2 x I
O
I
F
X
V
RRM
V
R
V
AR
I
O
X
V
I
R
VTo V
F(Io)
V
F
V
F(2xIo)
"Reverse"
I
AR
a. V
ARM
and I
ARM
must respect the reverse safe
operating area defined in
Figure 14.
V
AR
and I
AR
are
pulse measurements (t
p
< 1 µs). V
R
, I
R
, V
RRM
and V
F
,
are static characteristics
October 2011
Doc ID 022015 Rev 1
1/11
www.st.com
11
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