2N6084 datasheet, PDF - EEWORLD Datasheet

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2N6084: DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size281KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N6084 Overview

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN

2N6084 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1440793577
package instruction	0.380 INCH, PLASTIC, M135, 4 PIN
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Other features	HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
Maximum collector current (IC)	6 A
Collector-based maximum capacity	200 pF
Collector-emitter maximum voltage	18 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	5
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-XRPM-F4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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2N6084 Related Products

	2N6084	2N6080	2N6081	2N6082	2N6083
Description	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Objectid	1440793577	1440793544	1440793554	1440793562	1440793569
package instruction	0.380 INCH, PLASTIC, M135, 4 PIN	POST/STUD MOUNT, O-XRPM-F4	POST/STUD MOUNT, O-XRPM-F4	POST/STUD MOUNT, O-XRPM-F4	POST/STUD MOUNT, O-XRPM-F4
Contacts	4	4	4	4	4
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS	HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS	HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS	HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS	HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
Maximum collector current (IC)	6 A	1 A	2.5 A	4 A	4 A
Collector-based maximum capacity	200 pF	20 pF	85 pF	130 pF	130 pF
Collector-emitter maximum voltage	18 V	18 V	18 V	18 V	18 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	5	5	5	5	5
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	O-XRPM-F4	O-XRPM-F4	O-XRPM-F4	O-XRPM-F4	O-XRPM-F4
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	4	4	4	4	4
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	80 W	12 W	31 W	50 W	65 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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