VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 3 A
Base
common
cathode
4
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
D-PAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
2x3A
50 V, 60 V
0.65 V
15 mA at 125 °C
150 °C
Common cathode
6 mJ
DESCRIPTION
The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface
mount, center tap, Schottky rectifier series has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
6
50/60
490
0.65
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRD650CTPbF
50
VS-MBRD660CTPbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 128 °C, rectangular waveform
6
A
490
75
6
0.6
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
3.0
UNITS
Revision: 14-Jan-11
Document Number: 94314
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage current per leg
See fig. 2
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.7
0.9
0.65
0.85
0.1
15
145
5.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Approximate weight
per leg
per device
SYMBOL
T
J (1)
, T
Stg
R
thJC
R
thJA
DC operation
See fig. 4
TEST CONDITIONS
VALUES
-40 to +150
6
3
80
0.3
0.01
Case style D-PAK (similar to TO-252AA)
g
oz.
°C/W
UNITS
°C
Marking device
Note
(1)
MBRD650CT
MBRD660CT
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 14-Jan-11
Document Number: 94314
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
Vishay Semiconductors
100
10
T
J
= 150 °C
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
1
0.1
T
J
= 50 °C
T
J
= 25 °C
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
10
20
30
40
50
60
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
10
20
30
40
50
60
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Single pulse
(thermal resistance)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 14-Jan-11
Document Number: 94314
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
160
3.0
Vishay Semiconductors
Allowable Case Temperature (°C)
DC
Average Power Loss (W)
150
140
130
120
110
See note (1)
2.5
2.0
1.5
1.0
0.5
0
RMS limit
DC
Square wave (D = 0.50)
80 % rated V
R
applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0 4.5
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 14-Jan-11
Document Number: 94314
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
2
D
3
6
4
60
5
CT
6
TR
7
PbF
8
Vishay Semiconductors product
Schottky MBR series
D = TO-252AA (D-PAK)
Current rating (6 = 6 A)
Voltage ratings
CT = center tap (dual)
None = tube (50 pieces)
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
50 = 50 V
60 = 60 V
8
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95016
www.vishay.com/doc?95059
www.vishay.com/doc?95033
Revision: 14-Jan-11
Document Number: 94314
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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