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BLF6G10L-260PBM11

Description
RF MOSFET Transistors PWR LDMOS TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size4MB,120 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors PWR LDMOS TRANSISTOR

BLF6G10L-260PBM11 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current64 A
Vds - Drain-Source Breakdown Voltage65 V
TechnologySi
Gain22 dB
Output Power40 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-539A-5
PackagingTube
ConfigurationDual
Operating Frequency0.7 GHz to 1 GHz
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.9 V
RF Manual 15 edition
th
Application and design manual
for High Performance RF products
May 2011

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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